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Neuromorphic ferroelectric transistors integrating sensing and memory capabilities for photoelectric stimuli have provided a remarkable platform for multifunctional bionic vision. However, most hardware demonstrations utilizing ferroelectric transistors cannot implement multiple bio‐visual functions simultaneously under a small operating voltage with scalable material systems, which reduces the compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology and blocks further bio‐visual applications. Herein, an optoelectronic transistor gated is constructed with ferroelectric LiNbO3, which exhibits sensing‐memory‐processing functions and logic integration simultaneously under a low operating voltage (≈1.5 V). Benefiting from the programmable photoinduction and strong ferroelectric polarization, the reliable and highly controllable synaptic characteristics and the bio‐visual selective learning behavior are successfully demonstrated. A high recognition accuracy (≈94.5%) in simulations is also achieved due to the unique linear synaptic plasticity. Furthermore, based on dual‐wavelength modulation, the full‐optical logics "AND" and "OR" are established within the same device. This work provides novel opportunities for the complex multifunctional bionic vision and toward large‐scale integration compatible with silicon‐based CMOS processes. [ABSTRACT FROM AUTHOR]

Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability and stability are the problems that need to be solved for practical applications. Here, by introducing a damage‐less ion implantation technology using ultralow‐energy plasma, the transport mechanisms of space charge limited current and Schottky emission are successfully realized and controlled in RRAM based on 2D Bi2Se3 nanosheets. The memristors exhibit stable resistive switching behavior with a high resistive switching ratio (>104), excellent cycling endurances (300 cycles), and great retention performance (>104 s). The reliability and controllability of Bi2Se3 memory endowed by oxygen plasma injection demonstrate the great potential of this ultralow‐energy ion implantation technology in the application of 2D RRAM. [ABSTRACT FROM AUTHOR]

Due to the predicted excellent electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB TMDs have enormous potential in nanoelectronics. Here, the synthesis of ultrathin HfS2 flakes via space-confined chemical vapor deposition, realized by an inner quartz tube, is demonstrated. Moreover, the effect of key growth parameters including the dimensions of confined space and deposition temperature on the growth behavior of products is systematically studied. Typical as-synthesized HfS2 is a hexagonal-like flake with a smallest thickness of ≈1.2 nm (bilayer) and an edge size of ≈5 µm. The photodetector based on as-synthesized HfS2 flakes demonstrates excellent optoelectronic performance with a fast photoresponse time (55 ms), which is attributed to the high-quality crystal structure obtained at a high deposition temperature and the ultraclean interface between HfS2 and the mica substrate. With such properties HfS2 holds great potential for optoelectronics applications. [ABSTRACT FROM AUTHOR]