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Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics. [ABSTRACT FROM AUTHOR]

In the architecture described, cuprous oxide (Cu2O) is tamed to be highly (111) plane oriented nanostructure through adjusting the deposition postulate by glancing angle deposition technique. In the controlled atmosphere oxygen vacancy is introduced into the Cu2O crystal subsequently fostering an impurity energy state ( Eim) close to the conduction band. Our model of Cu2O electronic structure using density functional theory suggests that oxygen vacancies enhance the electron donating ability because of unshared d-electrons of Cu atoms (nearest to the vacancy site), allowing to pin the work function energy level around 0.28 eV compared to the bulk. This result is also complemented by Kelvin probe force microscopy analysis and X-ray photoelectron spectroscopy method. Oxygen vacancy in Cu2O (Cu2O1- δ) exhibits promising field emission properties with interesting field electron tunneling behavior at different applied fields. The films show very low turn-on and threshold voltages of value 0.8 and 2.4 V μm−1 respectively which is influenced by the oxygen vacancy. Here, a correlation between the work function modulation due to the oxygen vacancy and enhancement of field emission of Cu2O1- δ nanostructure is demonstrated. This work reveals a promising new vision for Cu2O as a low power field emitter device. [ABSTRACT FROM AUTHOR]

The ability to process and dimensionally scale field-effect transistors with and on paper and to integrate them as a core component for low-power-consumption analog and digital circuits is demonstrated. Low-temperature-processed p- and n-channel integrated oxide thin-film transistors in the complementary metal oxide semiconductor (CMOS) inverter architecture are seamlessly layered on mechanically flexible, low-cost, recyclable paper substrates. The possibility of building these circuits using low-temperature processes opens the door to new applications ranging from smart labels and sensors on clothing and packaging to electronic displays printed on paper pages for use in newspapers, magazines, books, signs, and advertising billboards. Because the CMOS circuits reported constitute fundamental building blocks for analog and digital electronics, this development creates the potential to have flexible form factor computers seamlessly layered onto paper. The holistic approach of merging low-power circuitry with a recyclable substrate is an important step towards greener electronics. [ABSTRACT FROM AUTHOR]

Sustainable and safe energy sources combined with cost effectiveness are major goals for society when considering the current scenario of mass production of portable and Internet of Things (IoT) devices along with the huge amount of inevitable e‐waste. The conceptual design of a self‐powered "eco‐energy" smart card based on paper promotes green and clean energy, which will bring the zero e‐waste challenge one step closer to fruition. A commercial raw filter paper is modified through a fast in situ functionalization method, resulting in a conductive cellulose fiber/polyaniline composite, which is then applied as an energy harvester based on a mechano‐responsive charge transfer mechanism through a metal/conducting polymer interface. Different electrodes are studied to optimize charge transfer based on contact energy level differences. The highest power density and current density obtained from such a paper‐based "eco‐energy" smart card device are 1.75 W m−2 and 33.5 mA m−2 respectively. This self‐powered smart energy card is also able to light up several commercial light‐emitting diodes, power on electronic devices, and charge capacitors. [ABSTRACT FROM AUTHOR]

The integration of bioinspired chiral cellulose nanocrystal (CNC) films into transistor devices with distinct sensing properties for left‐ and right‐handed circular polarized light (LCPL and RCPL, respectively) is reported. The CNC films with a left‐handed internal long‐range order are infiltrated with sodium ions to yield solid‐state electrolytes with photonic properties capable of LCPL reflection and RCPL transmission. They are employed as gate dielectrics in sputtered amorphous indium–gallium–zinc oxide (a‐IGZO) transistors. The obtained devices operate in depletion mode at low voltages (<2 V) with On–Off ratios of up to 7 orders of magnitude, subthreshold swings around 80 mV dec−1, and saturation mobilities up to 9 cm2 V−1 s−1. Combining the photonic character of the CNC films with the light sensitivity of a‐IGZO, the devices are capable of discrimination between LCPL and RCPL signals in the blue region. These type of devices can find application in photonics, emission, conversion, or sensing with CPL but also imaging or spintronics. [ABSTRACT FROM AUTHOR]