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The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electronics. In this work, pulsed‐laser deposition is used to grow HfO2 thin films on graphene/SiO2/Si. As graphene is easily damaged under standard oxide‐film deposition conditions, the process needs to be adjusted to minimize the oxidation and the collision‐induced damage. A systematic study is conducted in order to identify the crucial deposition parameters for diminishing the defect concentration in the graphene interlayer. For evaluating the quality of graphene, it is mainly relied on data obtained from Raman spectroscopy, using approaches beyond the Tuinstra‐Koenig relation. The results show that the defects are mainly a consequence of the high kinetic energy of the plasma‐plume particles. Using a relatively high Ar process pressure, a sufficiently low defect concentration is ensured, without compromising the quality of the HfO2 thin film. This enabled us to successfully prepare memristive devices with a filamentary type of switching, utilizing the graphene layer as a bottom electrode. The findings of this study can be easily transferred to other systems for the development of oxide electronic devices. [ABSTRACT FROM AUTHOR]

Phase transition is established to govern electrostatic energy storage for antiferroelectric (AFE)‐type dielectric capacitors. However, the source of inducing the phase transition and the pathway of storing the energy remains elusive so far given the ultrafast charging/discharging process under normal working conditions. Here, by slowing down the phase‐transition speed using electron‐beam irradiation as an external stimulus, the in situ dynamic energy‐storage process in AFE PbZrO3 is captured by using atomic‐resolution transmission electron microscopy. Specifically, it is found that oxygen‐lead‐vacancy‐induced defect core acts as a seed to initiate the antiferrodistortive‐to‐ferrodistortive transition in antiparallel‐Pb‐based structural frames. Associated with polarity evolution of the compressively strained defect core, the ferroelectric (FE)–ferrodistortive state expands bilaterally along the b‐axis direction and then develops into charged domain configurations during the energy‐storage process, which is further evidenced by observations at the ordinary FE states. With filling the gap of perception, the findings here provide a straightforward approach of unveiling the unit‐cell‐wise energy storage pathway in chemical defect‐engineered dielectric ceramics. [ABSTRACT FROM AUTHOR]

Phase transition is established to govern electrostatic energy storage for antiferroelectric (AFE)‐type dielectric capacitors. However, the source of inducing the phase transition and the pathway of storing the energy remains elusive so far given the ultrafast charging/discharging process under normal working conditions. Here, by slowing down the phase‐transition speed using electron‐beam irradiation as an external stimulus, the in situ dynamic energy‐storage process in AFE PbZrO3 is captured by using atomic‐resolution transmission electron microscopy. Specifically, it is found that oxygen‐lead‐vacancy‐induced defect core acts as a seed to initiate the antiferrodistortive‐to‐ferrodistortive transition in antiparallel‐Pb‐based structural frames. Associated with polarity evolution of the compressively strained defect core, the ferroelectric (FE)–ferrodistortive state expands bilaterally along the b‐axis direction and then develops into charged domain configurations during the energy‐storage process, which is further evidenced by observations at the ordinary FE states. With filling the gap of perception, the findings here provide a straightforward approach of unveiling the unit‐cell‐wise energy storage pathway in chemical defect‐engineered dielectric ceramics. [ABSTRACT FROM AUTHOR]