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Single‐atom catalysts (SACs) supported on inorganic materials have attracted much attention in numerous research fields for their high catalytic performance. However, such SACs have been limited by the low metal loading, especially on different types of inorganic supports. Herein, a general approach is presented for preparing SACs on metallic, metal oxide, and perovskite nanosheet (NS) supports to reach a high metal loading of up to 3.94 wt%, by utilizing N‐doped graphene as a sacrificial template that spatially confines the single atoms (SAs). Specifically, the target support material precursors are adsorbed onto the SAs‐stabilized sacrificial template, followed by subsequent heat treatment to transfer the SAs to the support material and to remove the graphene layer. Pt SAs on oxide support exhibits little to no aggregation throughout >10 000 min of annealing at 275 °C, demonstrating high thermal stability, as also supported by ex situ post‐anneal electron microscopy and X‐ray absorption fine structure studies. As a proof‐of‐concept, Pt SACs on SnO2 NSs exhibit high catalytic activity toward chemiresistive sensing of acetone gas (response = 95.4 at 10 ppm, 7.6‐fold enhancement compared with pristine SnO2 NSs) and unprecedented stability under highly humid conditions (27.4% response deterioration at 95% relative humidity). [ABSTRACT FROM AUTHOR]

Nanostructuring has significantly contributed to alleviating the huge volume expansion problem of the Ge anodes. However, the practical use of nanostructured Ge anodes has been hindered due to several problems including a low tap density, poor scalability, and severe side reactions. Therefore, micrometer-sized Ge is desirable for practical use of Ge-based anode materials. Here, micronized Ge3N4 with a high tap density of 1.1 mg cm−2 has been successfully developed via a scalable wet oxidation and a subsequent nitridation process of commercially available micrometer-sized Ge as the starting material. The micronized Ge3N4 shows much-suppressed volume expansion compared to micrometer-sized Ge. After the carbon coating process, a thin carbon layer (≈3 nm) is uniformly coated on the micronized Ge3N4, which significantly improves electrical conductivity. As a result, micronized Ge3N4@C shows high reversible capacity of 924 mAh g−1 (2.1 mAh cm−2) with high mass loading of 3.5 mg cm−2 and retains 91% of initial capacity after 300 cycles at a rate of 0.5 C. Additionally, the effectiveness of Ge3N4@C as practical anodes is comprehensively demonstrated for the full cell, showing stable cycle retention and especially excellent rate capability, retaining 47% of its initial capacity at 0.2 C for 12 min discharge/charge condition. [ABSTRACT FROM AUTHOR]

Nanoscale structure engineering is in high demand for various applications of 2D transition metal dichalcogenides (TMDs). An edge‐exposed 2D polycrystalline MoS2 nanomesh thin film is demonstrated via block copolymer (BCP) nanopatterning. Molybdenum nanomesh structure is formed by direct metal deposition of hexagonal cylinder BCP nanotemplate and the following lift‐off process. Subsequent sulfurization of the molybdenum nanomesh creates MoS2 nanomesh thin films without any degradative etching step. The approach is applicable to not only other metal sulfides and oxides but also other nanoscale structures of TMD thin films including nanodot and nanowire array by means of various BCP nanotemplate shapes. As the edge site of MoS2 is highly active for NO2 sensing, the edge‐exposed MoS2 nanomesh demonstrates sevenfold enhancement of sensitivity for NO2 molecules compared to uniform thin film as well as superior reversibility even under 80% relative humidity environment. This structure engineering method could greatly strengthen the potential application of 2D TMD materials with the optimal customized nanoscale structures. Nanopatterning of transition metal dichalcogenides (TMD) is presented. By exploiting block copolymer nanotemplate, desired metal nanopattern, including nanomesh, nanodot, and nanowire arrays, can be readily obtained with large area. The post sulfurization process gives rise to nanopattered TMD. The edge‐exposed MoS2 nanomesh exhibits a sevenfold enhancement of sensitivity for NO2 sensing and superior reversibility compared to the uniform thin film. [ABSTRACT FROM AUTHOR]