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All‐solid‐state battery (ASSB) is a potential future energy storage technology to power the future world. However, the solid–solid contacts among the various components in ASSB often require a high stack pressure which is unrealistic in practical applications. Here it is shown that by carbon‐coating Sb2Se3 (Sb2Se3@C) nanorods, a record low stack pressure is attained, and the Sb2Se3@C electrode exhibits outstanding performance of 862 mAh g−1 over 50 cycles at 0.1 A g−1 when it is operated at 5 MPa stack pressure in an ASSB using LiIn anode and Li10Si0.3PS6.7Cl1.8 solid‐state electrolytes. Furthermore, a record high active material loading (the mass fraction of Sb2Se3@C being 0.7 in composite cathode) is achieved, and the Sb2Se3@C based ASSB delivers a reversible capacity of 2.6 mAh cm−2 at 0.1 A g−1 after 100 cycles. This work provides a strategy to significantly increase the cathode active material loading and dramatically reduce the stack pressure of ASSBs, which brings it one step closer toward the practical implementation of ASSBs for energy storage applications. [ABSTRACT FROM AUTHOR]

The investigation of the oxidation behavior of van der Waals chalcogenides holds significant importance in terms of preventing and controlling oxidation, utilizing surface oxidation structures to regulate properties, and advancing applications. Here, taking GaSe as a candidate, its thermal oxidation and surface structure evolution are intensively studied. Through systematic microscopic analyses, oxidized structures at multi‐scale (from atomic scale to millimeters) are resolved, and various assembly heterogeneous surfaces including Ga2Se3/Ga2O3 and Ga2O3 multilayers are uncovered at different oxidation temperatures. The temperature‐dependent oxidation behavior and surface structure evolution of the GaSe are revealed, and the oxidation mechanisms in the entire temperature range are also disclosed. Finally, the photoluminescence regulation of the GaSe is initially explored via thermal oxidation, demonstrating great potential for surface oxidation engineering. This study is not only of great importance for the deep understanding and utilization of GaSe oxidation, but also beneficial for materials/device design and development of relative systems. [ABSTRACT FROM AUTHOR]