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The adaptability of living organisms to dynamically adjust their biological behavior in response to fluctuating surroundings is a prerequisite for their evolutionary success. However, artificially‐synthesized materials, especially semiconductors, have not been able to replicate such adaptability due to their inherent physical rigidity and lack of intrinsic structural responsiveness to external stimuli. Herein, an adaptive structural evolution in group‐III‐nitride semiconductors is demonstrated by constructing an AlGaN‐nanowire/Ni(OH)2 symbiotic‐system, resulting in self‐improved optoelectronic characteristics. The mutualistic interplay between AlGaN and Ni(OH)2 nanostructure leads to the adaptive evolution of crystalline‐facets of AlGaN‐nanowires, along with self‐optimization of Ni(OH)2 nanocrystals upon photon‐irradiation during its operation. Specifically, the nanowire‐surfaces dynamically evolve during Ni(OH)2 photo‐deposition, removing the (0001¯$\bar{1}$) plane while exposing the (101¯1¯$\bar{1}\bar{1}$), which facilitates carrier transport at AlGaN/Ni(OH)2 interface. Moreover, light‐induced electrons generated from AlGaN‐nanowires then partially reduce Ni2+ ions in the Ni(OH)2 nanostructure into Ni0 nanometals, which further boosts the proton reduction thermodynamics, generating an unusual self‐improving photocurrent from −59.6 to −101.6 µA cm−2. Such a "symbiotic system," which is barely observed in conventional semiconductors, provides a promising avenue toward realizing smart adaptive semiconductors that are capable of dynamic structural evolution to fully unleash their potential for emerging optoelectronic and artificial‐photocatalysis applications. [ABSTRACT FROM AUTHOR]