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The tribovoltaic effect can convert semiconductor interfacial frictional mechanical energy into direct current (DC) electricity, but the flexibility and durability of semiconductor materials limit its application in wearable electronic. Herein, a robust flexible textile tribovoltaic nanogenerator is presented based on a 2D dynamic heterojunction of 2H‐MoS2/Ta4C3 (MTNG). During the friction process, a built‐in electric field (Eb) and an additional interfacial electric field (ECE) are generated in a continuous dynamic contact of 2H‐MoS2/Ta4C3, and through the 2H‐MoS2/Ta4C3 dynamic heterojunction, a significant number of electron‐hole pairs are excited and move directionally to generate a DC. The influences of mechanical pressure and sliding speed on output performance of MTNGs are systematically investigated. The MTNGs deliver excellent output power density (39.15 mW m2) and outstanding robustness (43 000 cycles). Ten MTNGs can be connected in series to obtain a DC voltage of 3.3 V and in parallel to obtain a DC current of 75 µA. Furthermore, the MTNGs can effectively power a variety of commercial electronic watches and calculators by harvesting human kinetic energy. A 2D dynamic heterojunction 2H‐MoS2/Ta4C3 DC nanogenerator is described and offers a workable option for the creation of flexible DC power sources and self‐powered wearable electronics. [ABSTRACT FROM AUTHOR]

The tribovoltaic effect raises an emerging semiconductor energy technology and silicon‐based tribovoltaic nanogenerator (Si‐TVNG) has aroused great attentions. However, the electrical output of Si‐TVNG is extremely unstable due to its complicated mechanism. Here, a competitive mechanism between the built‐in electric field (BEF) and the interfacial electric field (IEF) is proposed to determine the current direction and magnitude of the Si‐TVNG. The results indicate that the natural oxide layer, load pressure, and resistivity of Si significantly affect the IEF and BEF. The natural oxide layer can store surface charges by contact electrification, resulting in a IEF dominant carriers transport process. Conversely, lower resistivity and higher load pressure can reduce the contact resistance, thereby decreasing the surface charges caused by contact electrification and leading to a BEF dominant carrier transport process. This work contributes to deeper understandings of the tribovoltaic effect and further clarifies the theoretical mechanisms of carrier excitation and directional transport. [ABSTRACT FROM AUTHOR]