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The development of inorganic hole‐transporting materials (HTMs) is one of the most reliable ways to improve the stability of perovskite solar cells (PSCs). However, the un‐optimal buried interfacial contacts and the defects located at the inorganic HTMs/perovskite interface restricted the device's performance. Herein, a phase‐pure CuScO2 has been synthesized and further employed as mesoporous HTM in inverted PSCs. Surprisingly, a facile pretreatment of the hole‐transport layer by a formamidine salt compensates the I− vacancy of the buried perovskite film, thus regulating the interfacial band energy alignment between the HTM and perovskite. This ion compensation strategy can not only in situ repair the ion loss and improve the built‐in electric field, but also decrease the charge injection barrier and suppress the non‐radiative interfacial recombination. Benefiting from these merits, the resulting methylammonium‐free (MA), Cs/FA‐based PSCs displays a power conversion efficiency (PCE) of 22.42% along with excellent thermal and light stability. Moreover, the pre‐buried treatment strategy can be extended to MA‐containing CsFAMA triple‐cation perovskite film, and a champion inverted device delivers a PCE of 23.11%. This study offers a new avenue to the rational design of HTMs for highly efficient and stable PSCs. [ABSTRACT FROM AUTHOR]

Recently, Kovalenko and co-workers and Li and co-workers developed CsPbX3 (X = Cl, Br, I) inorganic perovskite quantum dots (IPQDs), which exhibited ultrahigh photoluminescence (PL) quantum yields (QYs), low-threshold lasing, and multicolor electroluminescence. However, the usual synthesis needs high temperature, inert gas protection, and localized injection operation, which are severely against applications. Moreover, the so unexpectedly high QYs are very confusing. Here, for the first time, the IPQDs' room-temperature (RT) synthesis, superior PL, underlying origins and potentials in lighting and displays are reported. The synthesis is designed according to supersaturated recrystallization (SR), which is operated at RT, within few seconds, free from inert gas and injection operation. Although formed at RT, IPQDs' PLs have QYs of 80%, 95%, 70%, and FWHMs of 35, 20, and 18 nm for red, green, and blue emissions. As to the origins, the observed 40 meV exciton binding energy, halogen self-passivation effect, and CsPbX3@X quantum-well band alignment are proposed to guarantee the excitons generation and high-rate radiative recombination at RT. Moreover, such superior optical merits endow them with promising potentials in lighting and displays, which are primarily demonstrated by the white light-emitting diodes with tunable color temperature and wide color gamut. [ABSTRACT FROM AUTHOR]

Current–voltage hysteresis of perovskite solar cells (PSCs) has raised the concern of accurate performance measurement in practice. Although various theories have been proposed to elucidate this phenomenon, the origin of hysteresis is still an open question. Herein, the use of guanidinium cation (Gu+)‐dopant is demonstrated to tailor the crystal structure of mixed‐cation formamidinium‐cesium lead triiodide (FA0.83Cs0.17PbI3) perovskite, resulting in an improved energy conversion efficiency and tunable current–voltage hysteresis characteristic in planar solar cells. Particularly, when the concentration of Gu‐dopant for the perovskite film increases, the normal hysteresis initially observed in the pristine PSC is first suppressed with 2%‐Gu‐dopant, then changed to inverted hysteresis with a higher Gu‐dopant. The hysteresis tunability behavior is attributed to the interplay of charge/ion accumulation and recombination at interfaces in the PSC. Furthermore, compared to the cell without Gu+‐dopant, the optimal content of 2% Gu+‐dopant also increases the device efficiency by 14%, reaching over 17% under one sun illumination. A new method to control current–voltage hysteresis of planar structured FA0.83Cs0.17PbI3 perovskite solar cells (PSCs) is presented while enhancing device efficiency through tailoring the crystal structure of the perovskite compound with a guanidinium cation (Gu+)‐dopant. New insights into the correlation of the dynamics of device hysteresis with the interfacial charge recombination and accumulation in the PSCs are revealed. [ABSTRACT FROM AUTHOR]