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Your search keyword '"Xiangshui Miao"' showing total 17 results
Start Over Author "Xiangshui Miao" Journal advanced electronic materials
17 results on '"Xiangshui Miao"'

1. Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure

Author

Na Bai, Kan‐Hao Xue, Jinhai Huang, Jun‐Hui Yuan, Wenlin Wang, Ge‐Qi Mao, Lanqing Zou, Shengxin Yang, Hong Lu, Huajun Sun, and Xiangshui Miao

Subjects
ferroelectric capacitors, Hf 0.5Zr 0.5O2, Pt/ZrO 2 interfaces, rapid thermal annealing, wake‐up free, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
Abstract

Abstract The wake‐up phenomenon widely exists in hafnia‐based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at a higher temperature has been reported to be effective in eliminating wake‐up, but high temperature may yield the monoclinic phase or generate more oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of Hf0.5Zr0.5O2 (HZO) superlattice ferroelectrics, which involves heating from the Pt/ZrO2 interface side. It is demonstrated that 600 °C annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake‐up free nature and a switchable remnant polarization value of 27.4 µC cm−2. On the other hand, heating from the TiN/HfO2 side, or using 500 °C annealing temperature, could yield ferroelectric devices that require a wake‐up process. The special configuration of Pt/ZrO2 is verified by comparative studies with several other superlattice structures and HZO solid‐state solutions. It is discovered that heating from the Pt/HfO2 side at 600 °C leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia‐based ferroelectric devices.

Published
2023
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4. In Situ Encryption: Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security (Adv. Electron. Mater. 5/2021)

Author

Xiangshui Miao, Ling Yang, Hao-Yang Li, Long Cheng, Yi Li, Jiancong Li, and Ting-Chang Chang

Subjects
Hardware security module, Materials science, law, business.industry, Transistor, Electrical engineering, Cryptographic key generation, Memristor, Resistor, business, Encryption, Electronic, Optical and Magnetic Materials, law.invention
Published
2021
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7. Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security

Author

Ling Yang, Jiancong Li, Yi Li, Xiangshui Miao, Ting-Chang Chang, Hao-Yang Li, and Long Cheng

Subjects
Hardware security module, Materials science, business.industry, Transistor, Physical unclonable function, Electrical engineering, Memristor, Encryption, Subthreshold slope, Electronic, Optical and Magnetic Materials, law.invention, law, Cryptographic key generation, Resistor, business
Published
2021
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9. In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array

Author

Jiancong Li, Ling Yang, Long Cheng, Yi Li, Ting-Chang Chang, Xiangshui Miao, Jiahao Yin, Peng Yuan, Hangbing Lv, Hao-Xuan Zheng, and Qing Luo

Subjects
Materials science, law, In-Memory Processing, Memristor, Arithmetic, Hamming weight, Electronic, Optical and Magnetic Materials, law.invention
Published
2020
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13. Phase-Change Memory: Increasing the Atomic Packing Efficiency of Phase-Change Memory Glass to Reduce the Density Change upon Crystallization (Adv. Electron. Mater. 9/2018)

Author

Hao Tong, Qianqian Wu, Xiangshui Miao, Xiaomin Cheng, Ming Xu, Kailang Xu, Liangcai Wu, Meng Xu, and Hang Qian

Subjects
010302 applied physics, Materials science, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, Atomic packing factor, 01 natural sciences, Density change, Electronic, Optical and Magnetic Materials, law.invention, Phase-change memory, Ab initio quantum chemistry methods, law, Chemical physics, 0103 physical sciences, Crystallization, 0210 nano-technology
Published
2018
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14. Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing

Author

Kan-Hao Xue, Yi Li, Huajun Sun, Long Cheng, Xiangshui Miao, Zhuo-Rui Wang, Ya-Xiong Zhou, Ke Lu, Ting-Chang Chang, Miao-Miao Jin, Nian Duan, and Si-Yu Hu

Subjects
010302 applied physics, Structure (mathematical logic), Sequential logic, Materials science, 02 engineering and technology, Memristor, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, law, In-Memory Processing, 0103 physical sciences, Resistor, Arithmetic, 0210 nano-technology
Published
2018
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15. Increasing the Atomic Packing Efficiency of Phase-Change Memory Glass to Reduce the Density Change upon Crystallization

Author

Hang Qian, Hao Tong, Liangcai Wu, Ming Xu, Xiangshui Miao, Qianqian Wu, Xiaomin Cheng, Kailang Xu, and Meng Xu

Subjects
010302 applied physics, Materials science, Thermodynamics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Atomic packing factor, 01 natural sciences, Density change, Electronic, Optical and Magnetic Materials, law.invention, Phase-change memory, law, Ab initio quantum chemistry methods, 0103 physical sciences, Crystallization, 0210 nano-technology
Published
2018
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16. Memristors: Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks (Adv. Electron. Mater. 8/2015)

Author

Yingpeng Zhong, Lei Xu, Leon O. Chua, Yi Li, Xiangshui Miao, Ya-Xiong Zhou, Yang-Zhi Hu, and Shu-Jing Zhong

Subjects
Materials science, Neuromorphic engineering, Scale (ratio), law, Spike-timing-dependent plasticity, Contiguity, Electronic engineering, Memristor, Electronic, Optical and Magnetic Materials, Associative learning, law.invention
Published
2015
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17. Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks

Author

Xiangshui Miao, Yi Li, Yingpeng Zhong, Yang-Zhi Hu, Lei Xu, Leon O. Chua, Ya-Xiong Zhou, and Shu-Jing Zhong

Subjects
Materials science, Spike-timing-dependent plasticity, business.industry, Contiguity, Memristor, Extinction (psychology), Electronic, Optical and Magnetic Materials, law.invention, Associative learning, Neuromorphic engineering, law, Pattern recognition (psychology), Artificial intelligence, business, Massively parallel
Abstract

Memristors, acting as artificial synapses, have promised their prospects in neuromorphic systems that imitate the brain's computing paradigm. However, most studies focused on the understanding of the memristive mechanism and how to optimize the synaptic performance, and the implementations of higher-order cognitive functions are quite limited. Here the experimental demonstration of a representative network level learning function, i.e., associative learning and extinction, in a compact memristive neuromorphic circuit with only one memristor is reported. The association of the conditioned and unconditioned stimulus is established within a temporal window through the spike-timing-dependent plasticity rule, whereas the extinction of the formed memory is due to the synaptic depression. The temporal contiguity consists with biological behaviors and reflects nature's cause and effect rule. An efficient methodology of integrating memristors into large-scale neuromorphic systems for massively parallel computing, such as pattern recognition, is provided herein.

Published
2015
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