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In this paper, a new method is proposed to investigate the transport mechanism of copper thin film oxidation in water vapor using H162O/H182O isotopic labeling. Copper thin films are prepared on glass substrates by vacuum deposition. The structure of copper oxide film is analysed by X-ray diffraction (XRD). The distributions of16O and18O in the oxide film are analysed by secondary ion mass spectroscopy (SIMS). The results demonstrate that the transport mechanism of copper film oxidation is short-circuit diffusion mechanism.

A new method was proposed to investigate the transport mechanism of silicon oxidation at 1100 ℃ using H216O/H218O isotopic labeling. The formation and structure of silicon oxide film was analysed. The distribution of 16O and 18O in the oxide film was analysed by means of secondary ion mass spectroscopy (SIMS). The results demonstrate that the oxide film is non-crystalline during the oxidation of silicon in the water vapor and the transport mechanism is substitutional diffusion mechanism.

PEN films were prepared by vacuum deposition. Their electrical bistable properties were studied under conditions of various circuit parameters.A decrease of time needed for impedance transition with increasing circuit current was observed. The film impedance showed a nonlinear characteristics and then data fitting was done for the nonlinearity. Furthermore, an energy effect was found during the transition, i.e. when the applied voltage exceeds a threshold, the energy consumption keeps invariable.

Ag/TCNQ (7,7,8,8-tetracyanoquinodimethane) bi-layer films with different thickness were prepared by physical vapor deposition method. The metal-organic complex Ag-TCNQ is formed through transport. The transport behavior in the film was studied using transmission spectrum to monitor the process. Tunneling model and non-tunneling model were established respectively based on whether the tunneling condition was met. Theoretical analysis was carried out in detail. The results of our theoretical models are in good agreement with the experiment data.

Ag/TCNQ bi-layer films with different thickness were prepared on glass substrates by alternating vacuum deposition of Ag and TCNQ. The transport behavior in the film was studied using transmission spectrum to monitor the process. An ab normal accelerated transport phenomenon was observed when the film was ultra thin and a tunneling model was proposed to explain this phenomenon.