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This work analyzes the effects of a nearby Hf or Zr dopant on the electron density trapped at an oxygen vacancy site. The two metals are among the dopants used to achieve thermoluminescence and energy storage in phosphors based on cubic lutetium oxide (c-Lu 2 O 3 ). The presence of oxygen vacancies is anticipated in those phosphors. If the dopant is located outside the immediate surroundings of the vacancy site, the resulting optical trap depth is similar to that of the isolated oxygen vacancies (1.6-1.7 eV versus 1.7 eV). If the dopant is one of the four metal cations surrounding the vacancy site, the corresponding trap depth is 2.0-2.1 eV. Using time-dependent density-functional theory calculations, it was found that the excitation of the vacancy-trapped electrons can take two forms: a local excited state at the vacancy site can be formed, or an electron transfer to Hf might occur. With charge compensation in mind, several structures with three defects were analyzed: the dopant cation, the vacancy and an interstitial oxygen (Hf/Zr plus a Frenkel pair). These last two systems with the dopant in a +4 oxidation state and a single electron trapped at the vacancy site correspond to zero total charge, while another electron can be trapped. The vacancy site is expected to trap the electron, not the dopant. The composite defects of the dopant and Frenkel pair are thus considered the most likely electron traps in cubic Lu 2 O 3 :Hf and cubic Lu 2 O 3 :Zr.

A number of Lu 2 O 3 -based materials were reported to present efficient capability of trapping excited charge carriers in metastable excited states formed either by specific dopants or naturally occurring defects. Over the years, abundant experimental data have been collected, which were taken as a solid ground to treat the problem using computational chemistry. Density functional theory (DFT) calculations with an advanced meta generalized gradient approximation (mGGA) functional were used to analyze electron trapping in cubic Lu 2 O 3 doped with Hf. Individual ions of dopant and nearest-neighbor dopant ion pairs were considered. The effects of interstitial anions such as O 2- and Cl - were analyzed. In most of the analyzed cases the additional electron charge is localized at the dopant site. However, in many of the studied cases, the dopant/defect states overlap with the conduction band and cannot correspond to electron trapping. The Hf 3+ ion in the Lu site of C 3i local symmetry ({\rm Hf}^{\times}_{{\rm Lu}-C_{\rm 3i}}) corresponds to a moderate trap depth of 0.8-0.9 eV. Several composite defects corresponding to deeper (1.1-1.4 eV) traps also exist. Unambiguous deep traps (1.5-1.8 eV) correspond to systems with Hf dopant in the cationic void, accompanied by two interstitial oxygen atoms. The results thus indicate that basic `Hf-substitutes-Lu' doping is unlikely to correspond to the deep traps observed experimentally in Lu 2 O 3 :Tb,Hf andLu 2 O 3 :Pr,Hf and more complex defects must be involved.