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Your search keyword '"Jihan Chen"' showing total 3 results
Start Over Author "Jihan Chen" Journal acs photonics
3 results on '"Jihan Chen"'

1. Plasmon-Resonant Enhancement of Photocatalysis on Monolayer WSe2

Author

Stephen B. Cronin, Justin B. Sambur, Connor S. Bailey, Lang Shen, Yu Wang, Haotian Shi, Jihan Chen, Zhi Cai, Bingya Hou, Li Wang, Wencai Ren, Yilun Hong, and Eric Pop

Subjects
Materials science, business.industry, Finite-difference time-domain method, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, 010309 optics, chemistry.chemical_compound, Wavelength, chemistry, 0103 physical sciences, Monolayer, Photocatalysis, Tungsten diselenide, Optoelectronics, Water splitting, Electrical and Electronic Engineering, 0210 nano-technology, business, Plasmon, Biotechnology
Abstract

We report plasmonic enhancement of photocatalysis by depositing 5 nm Au nanoislands onto tungsten diselenide (WSe2) monolayer films. Under 532 nm wavelength illumination, the bare WSe2 film produce...

Published
2019

2. Avalanche Photoemission in Suspended Carbon Nanotubes: Light without Heat

Author

Rehan Kapadia, Stephen B. Cronin, Fatemeh Rezaeifar, Jihan Chen, Bo Wang, and Sisi Yang

Subjects
Materials science, Orders of magnitude (temperature), business.industry, Exciton, 02 engineering and technology, Carbon nanotube, Electroluminescence, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Condensed Matter::Materials Science, Band bending, law, Electric field, 0103 physical sciences, Optoelectronics, Field-effect transistor, Light emission, Electrical and Electronic Engineering, 010306 general physics, 0210 nano-technology, business, Biotechnology
Abstract

We observe bright electroluminescence from suspended carbon nanotube (CNT) field effect transistors (FETs) under extremely low applied electrical powers (∼nW). Here, light emission occurs under positive applied gate voltages, with the FET in its “off” state. This enables us to apply high bias voltages (4 V) without heating the CNT. Under these conditions, we observe light emission at currents as small as 1 nA and corresponding electrical powers of 4nW, which is 3 orders of magnitude lower than previous studies. Thermal emission is ruled out by monitoring the G band Raman frequency, which shows no evidence of heating under these small electrical currents. The mechanism of light emission is understood on the basis of steep band bending that occurs in the conduction and valence band profiles at the contacts, which produces a peak electric field of 500 kV/cm, enabling the acceleration of carriers beyond the threshold of exciton emission. The exciton-generated electrons and holes are then accelerated in this f...

Published
2017

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