1. Modulating Surface Morphology and Thin-Film Transistor Performance of Bi-thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductor by Altering Preaggregation in Solution
- Author
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Jidong Zhang, Hongxiang Li, Hongzhuo Wu, Xiaolan Qiao, and Guangcheng Ouyang
- Subjects
Diffraction ,Materials science ,Morphology (linguistics) ,General Chemical Engineering ,Transistor ,Intermolecular force ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Microstructure ,01 natural sciences ,Article ,0104 chemical sciences ,law.invention ,chemistry.chemical_compound ,Chemical engineering ,chemistry ,law ,Thin-film transistor ,Thin film ,0210 nano-technology ,Pyrrole - Abstract
Due to their strong intermolecular interactions, polymer semiconductors aggregate in solution even at elevated temperature. With the aim to study the effect of this kind preaggregation on the order of thin films and further transistor performance, bi-thieno[3,4-c]pyrrole-4,6-dione and fluorinated oligothiophene copolymerized polymer semiconductor P1, which shows strong temperature-dependent aggregation behavior in solution, is synthesized. Its films are deposited through a temperature-controlled dip-coating technique. X-ray diffraction and atomic force microscopy results reveal that the aggregation behavior of P1 in solution affects the microstructures and order of P1 films. The charge transport properties of P1 films are investigated with bottom-gate top-contacted thin-film transistors. The variation of device performance (from 0.014 to 1.03 cm2 Vā1 sā1) demonstrates the importance of optimizing preaggregation degree. The correlation between preaggregation degree and transistor performance of P1 films is explored.
- Published
- 2018