1. Bandgap Engineering and Enhancing Optoelectronic Performance of a Lead-Free Double Perovskite Cs 2 AgBiBr 6 Solar Cell via Al Doping.
- Author
-
Ullah A, Iftikhar Khan M, Ihtisham-Ul-Haq, Almutairi BS, N AlResheedi DB, and Choi JR
- Abstract
In this study, solar cells based on pure Cs
2 AgBiBr6 and Al-doped metal were fabricated using the sol-gel spin-coating technique. X-ray diffraction (XRD) analysis confirmed the formation of cubic-structured films for both pure and Al-doped. Notably, the grain size of Al-doped Cs2 AgBiBr6 was observed to be larger than that of its pure counterpart. The optical properties of these films were investigated using UV-vis spectroscopy, revealing essential parameters such as the bandgap energy ( Eg ), refractive index ( n ), extinction coefficients ( k ), and dielectric constant. While the pure film exhibited an Eg of 1.91 eV, the Al-doped film demonstrated a slightly lower Eg of 1.82 eV. Utilization of these films in solar cell fabrication yielded intriguing results. The J - V curve shows that the pure solar cell displayed a short-circuit current density ( Jsc ) of 5.01 mA/cm2 , a fill factor (FF) of 0.67, an open-circuit voltage ( Voc ) of 0.89 V, and an efficiency of 3.02%. Al doping led to improvements, with an increase in Voc to 0.91 V, FF to 0.71, and Jsc to 5.29 mA/cm2 . Consequently, the overall efficiency surged to 3.40%, marking a substantial 12.5% enhancement compared with the pure solar cell. These findings underscore the efficacy of Al doping in enhancing the performance of Cs2 AgBiBr6 -based solar cells., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)- Published
- 2024
- Full Text
- View/download PDF