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Polycyclic hydrocarbons (PHs) share the same hexagonal structure of sp

Porous organic cages (POCs) have many advantages, including superior microenvironments, good monodispersity, and shape homogeneity, excellent molecular solubility, high chemical stability, and intriguing host-guest chemistry. These properties enable POCs to overcome the limitations of extended porous networks such as metal-organic frameworks (MOFs) and covalent organic frameworks (COFs). However, the applications of POCs in bioimaging remain limited due to the problems associated with their rigid and hydrophobic structures, thus leading to strong aggregation-caused quenching (ACQ) in aqueous biological media. To address this challenge, we report the preparation of aggregation-induced emission (AIE)-active POCs capable of stimuli responsiveness for enhanced bioimaging. We rationally design a hydrophilic, structurally flexible tetraphenylethylene (TPE)-based POC that is almost entirely soluble in aqueous solutions. This POC's conformationally flexible superstructure allows the dynamic rotation of the TPE-based phenyl rings, thus endowing impressive AIE characteristics for responses to environmental changes such as temperature and viscosity. We employ these notable features in the bioimaging of living cells and obtain good performance, demonstrating that the present AIE-active POCs are suitable candidates for further biological applications.

Thinning crystalline materials to two dimensions (2D) creates a rich playground for electronic phases, including charge, spin, superconducting, and topological order. Bulk materials hosting charge density waves (CDWs), when reduced to ultrathin films, have shown CDW enhancement and tunability. However, charge order confined to only 2D remains elusive. Here we report a distinct charge ordered state emerging in the monolayer limit of $1T$-VSe$_2$. Systematic scanning tunneling microscopy experiments reveal that bilayer VSe$_2$ largely retains the bulk electronic structure, hosting a tri-directional CDW. However, monolayer VSe$_2$ -- consistently across distinct substrates -- exhibits a dimensional crossover, hosting two CDWs with distinct wavelengths and transition temperatures. Electronic structure calculations reveal that while one CDW is bulk-like and arises from the well-known Peierls mechanism, the other is decidedly unconventional. The observed CDW-lattice decoupling and the emergence of a flat band suggest that the new CDW could arise from enhanced electron-electron interactions in the 2D limit. These findings establish monolayer-VSe$_2$ as a host of coexisting charge orders with distinct origins, and enable the tailoring of electronic phenomena via emergent interactions in 2D materials., 8 pages, 5 figures

Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

Photovoltaic devices work by converting sunlight energy into electric energy. The efficiency of current photovoltaic devices, however, is significantly limited by the transmission loss of photons with energies below the bandgap of channel semiconductors, which can be circumvented by photon energy upconversion. Energy upconversion has been widely employed to improve the efficiency of traditional solar cells. However, the employment of energy upconversion in two-dimensional (2D) heterostructure photovoltaic devices has not been investigated yet. Here, we report the upconversion photovoltaic effect of WS2 monolayer/(C6H5C2H4NH3)2PbI4 (PEPI) 2D perovskite heterostructures by below-bandgap two-photon absorption via a virtual intermediate state. An open circuit voltage of 0.37 V and short circuit current of 7.4 pA are obtained with a photoresponsivity of 771 pA/W and current on/off ratio of 130:1. This work demonstrates that upconversion by two-photon absorption may potentially be a strategy for boosting the efficiency of 2D material-based photovoltaic devices by virtue of the absorption of photons below the bandgap energy of channel semiconductors.

Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices. Agency for Science, Technology and Research (A*STAR) Economic Development Board (EDB) National Research Foundation (NRF) Submitted/Accepted version This work is supported by an Industry-IHL Partnership Program (NRF2015-IIP001-001) and an EDB-IPP (RCA − 17/284) grant. This work is also supported by the RIE2020 ASTAR AME IAF-ICP grant (No. I1801E0030). W.Z. and P.K.J.W. acknowledge financial support by the Fundamental Research Funds for the Central Universities.

As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe2 is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe2. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe2 with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe2/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe2, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.

An atomically dispersed structure is attractive for electrochemically converting carbon dioxide (CO2) to fuels and feedstock due to its unique properties and activity. Most single-atom electrocatalysts are reported to reduce CO2 to carbon monoxide (CO). Herein, we develop atomically dispersed indium (In) on a nitrogen-doped carbon skeleton (In-N-C) as an efficient catalyst to produce formic acid/formate in aqueous media, reaching a turnover frequency as high as 26771 h-1 at -0.99 V relative to a reversible hydrogen electrode (RHE). Electrochemical measurements show that trace amounts of In loaded on the carbon matrix significantly improve the electrocatalytic behavior for the CO2 reduction reaction, outperforming conventional metallic In catalysts. Further experiments and density functional theory (DFT) calculations reveal that the formation of intermediate *OCHO on isolated In sites plays a pivotal role in the efficiency of the CO2-to-formate process, which has a lower energy barrier than that on metallic In.

Vanadium-based oxide is widely investigated as a zinc ion battery (ZIB) cathode due to its ability to react reversibly with Zn2+. Despite its successful demonstration, modification with simple molecules has shown some promise in enhancing the performance of ZIBs. Thus, this presents an immense opportunity to explore simple molecules that can dramatically improve the electrochemical performance of electrodes. Thus, the effect of CO2 modification is studied in this work by decomposing oxalic acid within a hydrated V6O13 framework. Based on the collective results, the presence of CO2 drastically lowers the relative energy of Zn2+ diffusion through the pathways by forming weak electrostatic interactions between OCO2 and Zn2+. This leads to an enlarged diffusion contribution, which consequently results in enhanced stability and better rate performance. The as-synthesized CO2-V6O13 electrode delivers one of the highest specific capacities reported for vanadium-based oxides of ca. 471 mAh g-1. Furthermore, an excellent cyclic stability of 80% capacity retention after 4000 cycles at 2 A g-1 is recorded for CO2-V6O13, which suggests the importance of simple molecules in the material framework toward the enhancement of ZIB cathode performance.

Epitaxial Fe3O4 thin films grown on single crystal MgO(001) present well-defined model systems to study fundamental multivalent ion diffusion and associated phase transition processes in transition...

With the rapid advances in wearable electronics and photonics, self-sustainable wearable systems are desired to increase service life and reduce maintenance frequency. Triboelectric technology stands out as a promising versatile technology due to its flexibility, self-sustainability, broad material availability, low cost, and good scalability. Various triboelectric-human-machine interfaces (THMIs) have been developed including interactive gloves, eye blinking/body motion-triggered interfaces, voice/breath monitors, and self-induced wireless interfaces. Nonetheless, THMIs conventionally use electrical readout and produce pulse-like signals due to the transient charge flows, leading to unstable and lossy transfer of interaction information. To address this issue, we propose a strategy by equipping THMIs with robust nanophotonic aluminum nitride (AlN) modulators for readout. The electrically capacitive nature of AlN modulators enables THMIs to work in the open-circuit condition with negligible charge flows. Meanwhile, the interaction information is transduced from THMIs' voltage to AlN modulators' optical output via the electro-optic Pockels effect. Thanks to the negligible charge flow and the high-speed optical information carrier, stable, information-lossless, and real-time THMIs are achieved. Leveraging the design flexibility of THMIs and nanophotonic readout circuits, various linear sensitivities independent of force speeds are achieved in different interaction force ranges. Toward practical applications, we develop a smart glove to realize continuous real-time robotics control and virtual/augmented reality interaction. Our work demonstrates a generic approach for developing self-sustainable HMIs with stable, information-lossless, and real-time features for wearable systems.

Atomic-scale defects in two-dimensional transition metal dichalcogenides (TMDs) often dominate their physical and chemical properties. Introducing defects in a controllable manner can tailor properties of TMDs. For example, chalcogen atom defects in TMDs were reported to trigger phase transition, induce ferromagnetism, and drive superconductivity. However, reported strategies to induce chalcogen atom defects including postgrowth annealing, laser irradiation, or plasma usually require high temperature (such as 500 °C) or cause unwanted structural damage. Here, we demonstrate low-temperature (60 °C) partial surface oxidation in 2D PdSe2 with low disorder and good stability. The combination of scanning tunneling microscopy, X-ray photoelectron spectroscopy, and density functional theory calculations provide evidence of atomic-scale partial oxidation with both atomic resolution and chemical sensitivity. We also experimentally demonstrate that this controllable oxygen incorporation effectively tailors the electronic, optoelectronic, and catalytic activity of PdSe2. This work provides a pathway toward fine-tuning the physical and chemical properties of 2D TMDs and their applications in nanoelectronics, optoelectronics, and electrocatalysis.

Enhancing catalytic activity by decorating noble metals in catalysts provides an opportunity for promoting the electrocatalytic hydrogen evolution reaction (HER) application. However, there are few...

The transition metal dichalcogenide (TMD)-metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe

Thinning crystalline materials to two dimensions (2D) creates a rich playground for electronic phases, including charge, spin, superconducting, and topological order. Bulk materials hosting charge density waves (CDWs), when reduced to ultrathin films, have shown CDW enhancement and tunability. However, charge order confined to only 2D remains elusive. Here we report a distinct charge ordered state emerging in the monolayer limit of 1

Dry adhesives that combine strong adhesion, high transparency, and reusability are needed to support developments in emerging fields such as medical electrodes and the bonding of electronic optical devices. However, achieving all of these features in a single material remains challenging. Herein, we propose a pressure-responsive polyurethane (PU) adhesive inspired by the octopus sucker. This adhesive not only showcases reversible adhesion to both solid materials and biological tissues but also exhibits robust stability and high transparency (>90%). As the adhesive strength of the PU adhesive corresponds to the application force, adhesion could be adjusted by the preloading force and/or pressure. The adhesive exhibits high static adhesion (∼120 kPa) and 180° peeling force (∼500 N/m), which is far stronger than those of most existing artificial dry adhesives. Moreover, the adhesion strength is effectively maintained even after 100 bonding-peeling cycles. Because the adhesive tape relies on the combination of negative pressure and intermolecular forces, it overcomes the underlying problems caused by glue residue like that left by traditional glue tapes after removal. In addition, the PU adhesive also shows wet-cleaning performance; the contaminated tape can recover 90-95% of the lost adhesion strength after being cleaned with water. The results show that an adhesive with a microstructure designed to increase the contribution of negative pressure can combine high reversible adhesion and long fatigue life.

Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. The optoelectronic functionality of 2D heterostructure devices is critically dependent on the relative rotation angle of the layers. However, the role of the relative rotation angle of the constituent layers on intralayer absorption is not clear yet. Here, we investigate MoS2/WSe2 vdW heterostructures using monochromated low-loss electron energy loss (EEL) spectroscopy combined with aberration-corrected scanning transmission electron microscopy and report that momentum conservation is a critical factor in the intralayer absorption of TMDC vdW heterostructures. The evolution of the intralayer excitonic low-loss EEL spectroscopy peak broadenings as a function of the rotation angle reveals that the interlayer charge transfer rate can be about an order of magnitude faster in the aligned (or anti-aligned) case than in the misaligned cases. These results provide a deeper insight into the role of momentum conservation, one of the fundamental principles governing charge transfer dynamics in 2D vdW heterostructures.

Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- and n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p- and n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.

Photovoltaic devices work by converting sunlight energy into electric energy. The efficiency of current photovoltaic devices, however, is significantly limited by the transmission loss of photons with energies below the bandgap of channel semiconductors, which can be circumvented by photon energy upconversion. Energy upconversion has been widely employed to improve the efficiency of traditional solar cells. However, the employment of energy upconversion in two-dimensional (2D) heterostructure photovoltaic devices has not been investigated yet. Here, we report the upconversion photovoltaic effect of WS

As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe

An atomically dispersed structure is attractive for electrochemically converting carbon dioxide (CO

The recent ExecutiveOrder by President Trump attempting to ban temporarily the citizens of seven countries (Iran, Iraq, Libya, Somalia, Sudan, Syria, and Yemen) from entering the United States is having significant consequences within the country and around the world. The Order poses a threat to the health and vitality of science, barring students and scientists from these countries from traveling to the United States to study or to attend conferences. In preventing those members of the international scientific community from traveling beyond U.S. borders without guaranteed safe return, the Executive Order demeans them; in so doing, it demeans us all. Universities and research communities are especially impacted, as major universities have students and often faculty holding passports from one of these seven countries. This temporary ban would affect refugees fleeing war-torn areas, challenging the long-standing notion that the United States is a safe haven for those fleeing persecution and war in addition to being a magnet for talent from every corner of the world. The pages of this journal reflect the geographic, ethnic, and cultural diversity that underpins great science. The ban impacts domestic and global scientific efforts and communities. Science succeeds through the cooperation between collections of individuals and teams around the world discovering and learning from each other. To ensure rapid scientific progress, open communication and exchange between scientists are essential. As scientists, engineers, and clinicians, we have benefited from open interactions and collaborations with visitors and students from all parts of the world as well as through scientific publications and discussions at scientific meetings.

Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.

Two-terminal resistive switching devices are commonly plagued with longstanding scientific issues including interdevice variability and sneak current that lead to computational errors and high-power consumption. This necessitates the integration of a separate selector in a one-transistor-one-RRAM (1T-1R) configuration to mitigate crosstalk issue, which compromises circuit footprint. Here, we demonstrate a multi-terminal memtransistor crossbar array with increased parallelism in programming

Vanadium-based oxide is widely investigated as a zinc ion battery (ZIB) cathode due to its ability to react reversibly with Zn