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Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe 2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu + is substituted for Cd 2+ transforming CdSe NCs to Cu-rich Cu 2 Se NC films. Next, Cu 2 Se NC films are dipped into a Na 2 Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu 2 Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine-indium chloride (TOP-InCl 3 ) is used as a source of In 3+ to partially exchange and n-dope CuInSe 2 NC films. We demonstrate Al 2 O 3 -encapsulated, air-stable CuInSe 2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm 2 /(V s) (10.5 ± 2.4 cm 2 /(V s)) and with current modulation of 10 5 , comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe 2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.