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One of the long-standing problems in the field of organic electronics is their instability in an open environment, especially their poor water resistance. For the reliable operation of organic devices, introducing an effective protection layer using organo-compatible materials and processes is highly desirable. Here, we report a facile method for the depositing of an organo-compatible superhydrophobic protection layer on organic semiconductors under ambient conditions. The protection layer exhibiting excellent water-repellent and self-cleaning properties was deposited onto organic semiconductors directly using a dip-coating process in a highly fluorinated solution with fluoroalkylsilane-coated titanium dioxide (TiO2) nanoparticles. The proposed protection layer did not damage the underlying organic semiconductors and had good resistance against mechanical-, thermal-, light-stress-, and water-based threats. The protected organic field-effect transistors exhibited more-reliable electrical properties, even when exposed to strong solvents, due to its superhydrophobicity. This study provides a practical solution with which to enhance the reliability of environmentally sensitive organic semiconductor devices in the natural environment.

One of the long-standing problems in the field of organic electronics is their instability in an open environment, especially their poor water resistance. For the reliable operation of organic devices, introducing an effective protection layer using organo-compatible materials and processes is highly desirable. Here, we report a facile method for the depositing of an organo-compatible superhydrophobic protection layer on organic semiconductors under ambient conditions. The protection layer exhibiting excellent water-repellent and self-cleaning properties was deposited onto organic semiconductors directly using a dip-coating process in a highly fluorinated solution with fluoroalkylsilane-coated titanium dioxide (TiO 2 ) nanoparticles. The proposed protection layer did not damage the underlying organic semiconductors and had good resistance against mechanical-, thermal-, light-stress-, and water-based threats. The protected organic field-effect transistors exhibited more-reliable electrical properties, even when exposed to strong solvents, due to its superhydrophobicity. This study provides a practical solution with which to enhance the reliability of environmentally sensitive organic semiconductor devices in the natural environment.

We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics.