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6 results on '"Muñoz Rojo A"'

1. Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube

Author

Stephanie M. Bohaichuk, Gregory Pitner, Jason Li, Miguel Muñoz Rojo, Jaewoo Jeong, Feifei Lian, Mahesh G. Samant, Stuart S. P. Parkin, Connor J. McClellan, H.-S. Philip Wong, and Eric Pop

Subjects
Materials science, Carbon nanotubes, General Physics and Astronomy, FOS: Physical sciences, Insulator (electricity), 02 engineering and technology, Scanning thermal microscopy, Carbon nanotube, 010402 general chemistry, 01 natural sciences, law.invention, Scanning probe microscopy, law, Thermal engineering, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Nanoscopic scale, Kelvin probe force microscope, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, General Engineering, Vanadium dioxide, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, 0104 chemical sciences, Scanning Probe Microscopy (SPM), Optoelectronics, 0210 nano-technology, business, Insulator-metal transition, Voltage
Abstract

Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 ${\mu}W$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour.

Published
2019

2. Low Variability in Synthetic Monolayer MoS2 Devices

Author

Miguel Muñoz Rojo, Saurabh V. Suryavanshi, Kirby K. H. Smithe, Aria Tedjarati, and Eric Pop

Subjects
010302 applied physics, Materials science, business.industry, Bilayer, General Engineering, Analytical chemistry, General Physics and Astronomy, Charge density, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, Hysteresis, 0103 physical sciences, Monolayer, Surface roughness, Optoelectronics, General Materials Science, 0210 nano-technology, business, Order of magnitude
Abstract

Despite much interest in applications of two-dimensional (2D) fabrics such as MoS2, to date most studies have focused on single or few devices. Here we examine the variability of hundreds of transistors from monolayer MoS2 synthesized by chemical vapor deposition. Ultraclean fabrication yields low surface roughness of ∼3 A and surprisingly low variability of key device parameters, considering the atomically thin nature of the material. Threshold voltage variation and very low hysteresis suggest variations in charge density and traps as low as ∼1011 cm−2. Three extraction methods (field-effect, Y-function, and effective mobility) independently reveal mobility from 30 to 45 cm2/V/s (10th to 90th percentile; highest value ∼48 cm2/V/s) across areas >1 cm2. Electrical properties are remarkably immune to the presence of bilayer regions, which cause only small conduction band offsets (∼55 meV) measured by scanning Kelvin probe microscopy, an order of magnitude lower than energy variations in Si films of comparab...

Published
2017

4. Low Variability in Synthetic Monolayer MoS

Author

Kirby K H, Smithe, Saurabh V, Suryavanshi, Miguel, Muñoz Rojo, Aria D, Tedjarati, and Eric, Pop

Abstract

Despite much interest in applications of two-dimensional (2D) fabrics such as MoS

Published
2017

6. Localized Triggering of the Insulator-Metal Transition in VO2Using a Single Carbon Nanotube

Author

Bohaichuk, Stephanie M., Muñoz Rojo, Miguel, Pitner, Gregory, McClellan, Connor J., Lian, Feifei, Li, Jason, Jeong, Jaewoo, Samant, Mahesh G., Parkin, Stuart S. P., Wong, H.-S. Philip, and Pop, Eric

Abstract

Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ∼1 nm-wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2at less than half the voltage and power required by control devices without a CNT, with switching power as low as ∼85 μW at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin probe microscopy and scanning thermal microscopy. Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2by the CNT plays a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2using nanoscale heaters and highlight the significance of thermal engineering to improve device behavior.

Published
2019
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