Search

Tin–lead (Sn–Pb) perovskite solar cells (PSCs) hold considerable potential for achieving efficiencies near the Shockley–Queisser (S–Q) limit. Notably, the inverted structure stands as the preferred fabrication method for the most efficient Sn–Pb PSCs. In this regard, it is imperative to implement a strategic customization of the hole selective layer to facilitate carrier extraction and refine the quality of perovskite films, which requires effective hole selectivity and favorable interactions with Sn–Pb perovskites. Herein, we propose the development of Co-Self-Assembled Monolayers (Co-SAM) by integrating both [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and glycine at the buried contacts. The one-step deposition process employed in the fabrication of the Co-SAM ensures uniform coverage, resulting in a homogeneous surface potential. This is attributed to the molecular interactions occurring between 2PACz and glycine in the processing solution. Furthermore, the amine (−NH2) and ammonium (−NH3+) groups in glycine effectively passivate Sn4+defects at the buried interface of Sn–Pb perovskite films, even under thermal stress. Consequently, the synergistic buried interface regulation of Co-SAM leads to a power conversion efficiency (PCE) of 23.46%, which outperforms devices modified with 2PACz or glycine alone. The Co-SAM-modified Sn–Pb PSC demonstrates enhanced thermal stability, maintaining 88% of its initial PCE under 65 °C thermal stress for 590 h.

Organic–inorganic hybrid perovskites hold great potential for various optoelectronic devices with exceptional properties. Although the direct generation of circularly polarized emission from perovskites would enable various compact devices, achieving a large degree of circular polarization (DCP) at room temperature still remains challenging. Herein, we demonstrate that DCP can be strongly enhanced at the narrow mode position of chiral Fano resonances. In our design, a perovskite film is spin-coated on a symmetry-broken structure with a relatively large feature size. A large DCP of more than 0.5 is achieved at room temperature without the direct patterning of the perovskite layer. Reciprocity calculation reveals that chiral field enhancement enables the emission of opposite helicity to couple into counter-propagating slab modes and leads to a large DCP. Our design is very general and scalable. Our work may lead to circularly polarized light sources based on various perovskite materials.

Transition metal dichalcogenides (TMDs), due to their fascinating properties, have emerged as potential next-generation semiconducting nanomaterials across diverse fields of applications. When combined with other material systems, precise control of the intrinsic properties of the TMDs plays a vital role in maximizing their performance. Defect-induced atomic doping through introduction of a chalcogen vacancy into the TMDs lattices is known to be a promising strategy for modulating their characteristic properties. As a result, there is a need to develop tunable and scalable synthesis routes to achieve vacancy-modulated TMDs. Herein, we propose a facile liquid-phase ligand exchange approach for scalable, uniform, and vacancy-tunable synthesis of TMDs films. Varying the relative molar ratio of the chalcogen to transition metal precursors enabled the in situmodulation of the chalcogen vacancy concentrations without necessitating additional post-treatments. When employed as the electrocatalyst in the hydrogen evolution reaction (HER), the vacancy-modulated TMDs, exhibiting a synergetic effect on the energy level matching to the reduction potential of water and optimized free energy differences in the HER pathways, showed a significant enhancement in the hydrogen production viathe improved charge transfer kinetics and increased active sites. The proposed approach for synthesizing tunable vacancy-modulated TMDs with wafer-scale synthesis capability is, therefore, promising for better practical applications of TMDs.

We have devised a dielectric film with a chemical vapor deposited graphene interlayer and studied the effect of the graphene interlayer on the dielectric performance. The highly transparent and flexible film was a polymer/graphene/polymer ‘sandwich-structure’ fabricated by a one-step transfer method that had a dielectric constant of 51, with a dielectric loss of 0.05 at 1 kHz. The graphene interlayer in the film forms a space charge layer, i.e., an accumulation of polarized charge carriers near the graphene, resulting in an induced space charge polarization and enhanced dielectric constant. The characteristic of the space charge layer for the graphene dielectric film, the sheet resistance of the graphene interlayer, was adjusted through thermal annealing that caused partial oxidation. The dielectric film with higher sheet resistance due to the oxidized graphene interlayer had a significantly lower dielectric constant compared to that with the graphene with lower interlayer sheet resistance. Oxidizing the graphene interlayer yields a smaller and thinner space charge density in the dielectric film, ultimately leading to decreased capacitance. Considering the simplicity of the fabrication process and high dielectric performance, as well as the high transparency and flexibility, this film is promising for applications in plastic electronics.

We report on the preparation of transparent oriented titania nanotube (NT) photoelectrodes and the effect of illumination direction on light harvesting, electron transport, and recombination in dye-sensitized solar cells (DSSCs) incorporating these electrodes. High solar conversion efficiency requires that the incident light enters the cell from the photoelectrode side. However, it has been synthetically challenging to prepare transparent TiO2NT electrodes by directly anodizing Ti metal films on transparent conducting oxide (TCO) substrates because of the difficulties of controlling the synthetic conditions. We describe a general synthetic strategy for fabricating transparent TiO2NT films on TCO substrates. With the aid of a conducting Nb-doped TiO2(NTO) layer between the Ti film and TCO substrate, the Ti film was anodized completely without degrading the TCO. The NTO layer was found to protect the TCO from degradation through a self-terminating mechanism by arresting the electric field-assisted dissolution process at the NT−NTO interface. The illumination direction and wavelength of the light incident on the DSSCs were shown to strongly influence the incident photon-to-current conversion efficiency, light-harvesting, and charge-collection properties, which, in turn, affect the photocurrent density, photovoltage, and solar energy conversion efficiency. Effects of NT film thickness on the properties and performance of DSSCs were also examined. Illuminating the cell from the photoelectrode substantially increased the conversion efficiency compared with illuminating it from the counter-electrode side.