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2 results on '"Federico Panciera"'

1. Regulated Dynamics with Two Monolayer Steps in Vapor–Solid–Solid Growth of Nanowires

Author

Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche, Laurent Travers, Martien den Hertog, Jean-Christophe Harmand, Frank Glas, Joël Cibert, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Matériaux, Rayonnements, Structure (NEEL - MRS), and Nanophysique et Semiconducteurs (NEEL - NPSC)

Subjects
Condensed Matter - Materials Science, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Engineering, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, General Materials Science
Abstract

International audience; The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape, of the solid gold nanoparticle during vapor-solid-solid growth. We show the balance between one-monolayer and two-monolayer steps which characterizes the vapor-liquid-solid and vapor-solid-solid growth modes of ZnTe. We discuss the likely role of the mismatch strain and lattice coincidence between gold and ZnTe on the predominance of two-monolayer steps during vapor-solid-solid growth, and on the subsequent self-regulation of the step dynamics. Finally, the formation of an interface between CdTe and ZnTe is described.

Published
2022
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2. Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Author

Simon M-M Dubois, Victor Zatko, Jean-Christophe Charlier, Pierre Seneor, Marie-Blandine Martin, Federico Panciera, Bruno Dlubak, Gilles Patriarche, Bernard Servet, Florian Godel, J. Peiro, C. Carrétéro, Sophie Collin, Marta Galbiati, Pierre Brus, Anke Sander, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Institut de la matière condensée et des nanosciences / Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain = Catholic University of Louvain (UCL), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Thales Research and Technologies [Orsay] (TRT), THALES, and UCL - SST/IMCN/MODL - Modelling

Subjects
Van der waals heterostructures, Materials science, Scale (ratio), Band gap, quantum well, General Physics and Astronomy, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Pulsed laser deposition, chemistry.chemical_compound, tungsten disulfide, tungsten diselenide, Tungsten diselenide, General Materials Science, Physics::Atomic Physics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], van der Waals heterostructure, pulsed laser deposition, Quantum well, 2D semiconductors, Condensed matter physics, business.industry, General Engineering, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, chemistry, 0210 nano-technology, business
Abstract

International audience; We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400°C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro-and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III−V semiconductors' successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.

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