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Electron transporting layer (ETL)-free perovskite solar cells (PSCs) exhibit promising progress in photovoltaic devices due to the elimination of the complex and energy-/time-consuming preparation route of ETLs. However, the performance of ETL-free devices still lags behind conventional devices because of mismatched energy levels and undesired interfacial charge recombination. In this study, we introduce sodium fluoride (NaF) as an interface layer in ETL-free PSCs to align the energy level between the perovskite and the FTO electrode. KPFM measurements clearly show that the NaF layer covers the surface of rough underlying FTO very well. This interface modification reduces the work function of FTO by forming an interfacial dipole layer, leading to band bending at the FTO/perovskite interface, which facilitates an effective electron carrier collection. Besides, the part of Na + ions is found to be able to migrate into the absorber layer, facilitating enlarged grains and spontaneous passivation of the perovskite layer. As a result, the efficiency of the NaF-treated cell reaches 20%, comparable to those of state-of-the-art ETL-based cells. Moreover, this strategy effectively enhances the operational stability of devices by preserving 94% of the initial efficiency after storage for 500 h under continuous light soaking at 55 °C. Overall, these improvements in photovoltaic properties are clear indicators of enhanced interface passivation by NaF-based interface engineering.

Two-dimensional (2D) metal halide perovskites have recently emerged as promising photovoltaic materials due to their superior ambient stability and rich structural diversity. However, power conversion efficiencies (PCEs) of the 2D perovskites solar cells (PSCs) still lag behind their three-dimensional (3D) counterpart, particularly due to the anisotropy in the charge carrier mobility and inhomogeneous energy landscape. A promising alternative is Dion-Jacobson (D-J) phase quasi-2D perovskite, where the bulky organic diammonium cations are introduced into inorganic frameworks to remove the weak van der Waals interactions between interlayers and to improve the open-circuit voltage ( V oc ). Although the D-J phase 2D perovskite shows a homogeneous energy landscape and better charge transport, their poor crystallinity and existence of higher trap states remain a major challenge for the development of high-efficiency solar cells device. To address this issue, here, we report the eclipsed D-J phase 2D perovskite using 1,5-diaminonaphthalene cation and subsequently treated the film with ammonium thiocyanate (NH 4 SCN) additive to further improve the film crystallinity, out-of-plane orientation, and carrier mobility. We observe that 2 mol NH 4 SCN surface treatment in NDA-based D-J phase perovskite leads to better film morphology and improved crystallinity, as confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Time-resolved photoluminescence (TRPL) spectroscopy and steady-state space charge limited current (SCLC) mobility measurement reveal a significant reduction of trap-assisted nonradiative recombination and improvement of carrier mobility in the thiocyanate-passivated perovskite. Consequently, the PCE of the NH 4 SCN-treated (NDA)(MA) 3 (Pb) 4 (I) 13 perovskite device enhanced nearly 46% from 10.3 to 15.08%. We have further studied intensity-dependent J - V characteristics, which demonstrate the reduction of ideality factor, confirming the effective suppression of trap-assisted nonradiative recombination, consistent with the transient PL results. Electrochemical impedance spectroscopy (EIS) confirms the improved charge carrier transport in NH 4 SCN additive-treated devices. Interestingly, our additive-engineered unsealed perovskite devices retained 75% of their initial efficiency after 1000 h of continuous storage under 60% relative humidity. This study opens up the strategy for developing high-efficiency and stable 2D perovskite solar cells.

Fullerene derivatives with a strong electron-accepting ability play a crucial role in enhancing both the performance and stability of perovskite solar cells (PSCs). However, most of the used fullerene molecules are based on [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM), which limits the device performance due to difficulties in preparing high-quality and uniform thin films. Herein, solution-processable azahomofullerene (AHF) derivatives (abbreviated as AHF-1 and AHF-2) are reported as novel and effective electron-transport layers (ETLs) in p-i-n planar PSCs. Compared to the control PCBM ETL-based PSCs, the devices based on AHFs exhibit higher photovoltaic performances, which is attributed to the enhanced charge-transport properties and improved layer morphology leading to a maximum power conversion efficiency (PCE) of 20.21% in the case of the device based on AHF-2 ETL. Besides, due to the preferable energy band alignment with the perovskite layer, reduced trap states, and suppressed charge recombination, the device with AHF-2 ETL exhibits significantly suppressed hysteresis and improved stability under both ambient and thermal conditions.

Perovskite solar cells (PSCs) have experienced outstanding advances in power conversion efficiencies (PCEs) by employing new electron transport layers (ETLs), interface engineering, optimizing perovskite morphology, and improving charge collection efficiency. In this work, we study the role of a new ultrathin interface layer of titanium nitride (TiN) conformally deposited on a mesoporous TiO 2 (mp-TiO 2 ) scaffold using the atomic layer deposition method. Our characterization results revealed that the presence of TiN at the ETL/perovskite interface improves the charge collection as well as reduces the interface recombination. We find that the morphology (grain size) and optical properties of the perovskite film deposited on the optimized mp-TiO 2 /TiN ETL are improved drastically, leading to devices with a maximum PCE of 19.38% and a high open-circuit voltage ( V oc ) of 1.148 V with negligible hysteresis and improved environmental (∼40% RH) and thermal (80 °C) stabilities.

PbS quantum dots (QDs) have gained significant attention as promising solution-based materials for third generation of photovoltaic (PV) devices, thanks to their size-tunable band gap, air stability, and low-cost solution processing. Gold (Au), despite its high cost, is the standard electrode in the conventional PbS QD PV architecture because of its perfect alignment with valence levels of PbS QDs. However, to comply with manufacturing requirements for scalable device processing, alternative cost-effective electrodes are urgently required. Here, we employed an interface engineering approach and deposited poly(3-hexylthiophene-2,5-diyl) as a hole transport layer on 1,2-ethanedithiol-capped PbS QDs in order to adjust the valence band of QDs with the work function of inexpensive copper (Cu) electrodes. In fact, this is the first report of a Au-free PbS QD PV system employing the conventional device structure. Our Cu-based device shows a maximum power conversion efficiency (PCE) of 8.7% which is comparable with that of the Au-based device (10.2%). Interestingly, the P3HT-based device shows improved stability with relatively 10% PCE loss after 230 h under continuous illumination. Moreover, using an ultrathin Cu electrode, a semitransparent PbS QD PV is fabricated with a remarkably high average visible transparency of 26% and a PCE of 7.4%.

PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and low-cost method to effectively recover the device performance and stability. Our optimization results show that a 10 min treatment is the best condition, resulting in an enhanced power conversion efficiency from 6.9% for the as-prepared device to 9% for the plasma treated one. Moreover, our modified device shows long-term shelf-life stability.

Recently, photoelectrochemical conversion (PEC) of water into fuel is attracting great attention of researchers due to its outstanding benefits. Herein, a systematic study on PEC of water using CuFe 2 O 4 / α-Fe 2 O 3 composite thin films is presented. CuFe 2 O 4 / α-Fe 2 O 3 composite thin films were deposited on two different substrates; (1) planner FTO glass and (2) 3-dimensional nanospike (NSP). The films on both substrates were characterized and tested as anode material for photoelectrochemical water splitting reaction. During PEC studies, it was observed that the ratio between two components of composite is crucial and highest PEC activity results were achieved by 1:1 component ratio (CF-1) of CuFe 2 O 4 and α-Fe 2 O 3 . The CF-1 ratio sample deposited on planar FTO substrate provided a photocurrent density of 1.22 mA/cm 2 at 1.23 V RHE which is 1.9 times higher than bare α-Fe 2 O 3 sample. A significant PEC activity outperformance was observed when CF-1 ratio composite thin films were deposited on 3D NSP. The highest photocurrent density of 2.26 mA/cm 2 at 1.23 V RHE was achieved for 3D NSP sample which is around 3.6 times higher than photocurrent density generated by α-Fe 2 O 3 thin film only. The higher photocurrent densities of 3D nanostructured devices compared to planar one are attributed to the enhanced light trapping and increased surface area for photoelectrochemical water oxidation on the surface. The difference between valence and conduction bands of CuFe 2 O 4 and α-Fe 2 O 3 allows better separation of photogenerated electrons and holes at the CuFe 2 O 4 / α-Fe 2 O 3 interface which makes it more active for photoelectrochemical water splitting.

Three-dimensional (3-D) structures have triggered tremendous interest for thin-film solar cells since they can dramatically reduce the material usage and incident light reflection. However, the high aspect ratio feature of some 3-D structures leads to deterioration of internal electric field and carrier collection capability, which reduces device power conversion efficiency (PCE). Here, we report high performance flexible thin-film amorphous silicon solar cells with a unique and effective light trapping scheme. In this device structure, a polymer nanopillar membrane is attached on top of a device, which benefits broadband and omnidirectional performances, and a 3-D nanostructure with shallow dent arrays underneath serves as a back reflector on flexible titanium (Ti) foil resulting in an increased optical path length by exciting hybrid optical modes. The efficient light management results in 42.7% and 41.7% remarkable improvements of short-circuit current density and overall efficiency, respectively. Meanwhile, an excellent flexibility has been achieved as PCE remains 97.6% of the initial efficiency even after 10 000 bending cycles. This unique device structure can also be duplicated for other flexible photovoltaic devices based on different active materials such as CdTe, Cu(In,Ga)Se2 (CIGS), organohalide lead perovskites, and so forth.