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Self-formation of boron-doped diamond (BDD)-multilayer graphene (MLG) core-shell nanowalls (BDGNWs) via microwave plasma-enhanced chemical vapor deposition is systematically investigated. Here, the incorporation of nitrogen brings out the origin of MLG shells encapsulating the diamond core, resulting in unique sp 3 /sp 2 hybridized frameworks. The evolution mechanism of the nanowall-like morphology with the BDD-MLG core-shell composition is elucidated through a variety of spectroscopic studies. The photocatalytic performance of these core-shell nanowalls is examined by the deterioration of methylene blue (MB) and rhodamine B (RhB) dyes beneath low-power ultraviolet (UV) light irradiation. Starting with 5 ppm dye solutions and employing BDGNWs as the photocatalyst, remarkable degradation efficiencies of 95% for MB within 100 min and 91% for RhB within 220 min are achieved. The effect of varying dye concentrations was also examined. The enhanced photocatalytic activity is driven by carrier photogeneration and mediated by the Schottky junction formed between BDD and MLG, promoting efficient photoinduced charge separation. The stability of the BDGNW photocatalyst is examined, and after five test runs, the photocatalytic behavior for MB and RhB degradation decreases to 87 and 85%, respectively, from initial values of 96 and 91%, demonstrating excellent photostability. These findings underscore the significance of diamond-graphene nanoarchitectures as promising green carbonaceous photocatalysts.

Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS 2 /PtSe 2 with a current rectification ratio exceeding 10 5 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.

Self-powered operation and multifunctionality have significantly oriented the development of photodetectors (PDs), which could be realized through nanoarchitecture construction and energy band structure design. Herein, a self-powered wavelength-dependent dual-polarity response PD based on (CdS@PEDOT:PSS@Au) sandwich-structured core-shell nanorod arrays (NRAs) is proposed. The synthesis approach of this three-layer heterostructure consists of a hydrothermal reaction, spin coating, and thermal evaporation. The n -CdS/ p -PEDOT:PSS junction and the PEDOT:PSS/Au Schottky junction at the interfaces provide two photocurrent driving forces in opposite directions, and their contribution to the net photocurrent is controlled by the incident light wavelength due to the different light absorption ranges of the CdS core and the PEDOT:PSS shell. As a result, the polarity of the photocurrent switches from negative to positive as the wavelength increases. In addition, the response speed of negative photocurrents (∼10 ms) is faster than that of positive photocurrents (∼100 ms), which is consistent with the underlying mechanism of the dual-polarity response. Furthermore, color discrimination and imaging capabilities are demonstrated by deploying the PDs as sensing pixels and recognizing green and red patterns. The sandwich-structured core-shell NRA heterojunction system introduces a novel idea for dual-polarity response PDs.

Tribovoltaic devices are attracting increasing attention as motion-based energy harvesters due to the high local current densities that can be generated. However, while these tribovoltaic devices are being developed, debate remains surrounding their fundamental mechanism. Here, we fabricate thin films from one of the world's most common oxides, TiO 2 , and compare the tribovoltaic performance under contact with metals of varying work functions, contact areas, and applied pressure. The resultant current density shows little correlation with the work function of the contact metal and a strong correlation with the contact area. Considering other effects at the metal-semiconductor interface, the thermoelectric coefficients of different metals were calculated, which showed a clear correlation with the tribovoltaic current density. On the microscale, molybdenum showed the highest current density of 192 mA cm -2 . This work shows the need to consider a variety of mechanisms to understand the tribovoltaic effect and design future exemplar tribovoltaic devices.

Photocatalytic water cracking hydrogen (H 2 ) production is a promising clean energy production technology. Therefore, a ternary CdS@Nb 2 O 5 /Nb 2 C T x (MXene) heterojunction with hierarchical structure was designed to promote photocatalytic H 2 evolution. When Na 2 S/Na 2 SO 3 and lactic acid were used as sacrificial agents, the hydrogen evolution reaction (HER) rates of the optimized photocatalyst were 1501.7 and 2715.8 μmol g -1 , with 12.4% and 26.1% apparent quantum efficiencies (AQE) at 420 nm, respectively. Its HER performance was 10.9-fold higher than that of pure CdS and remained 87% activity after five rounds of cycle tests. Such an enhancement stems from the excellent light absorption properties, tight interfacial contact, fast charge transfer channel, and sufficient active sites. Mechanism analysis demonstrates that S-scheme and Schottky junction synchronous regulation boost hierarchical CdS@Nb -1 , with 12.4% and 26.1% apparent quantum efficiencies (AQE) at 420 nm, respectively. Its HER performance was 10.9-fold higher than that of pure CdS and remained 87% activity after five rounds of cycle tests. Such an enhancement stems from the excellent light absorption properties, tight interfacial contact, fast charge transfer channel, and sufficient active sites. Mechanism analysis demonstrates that S-scheme and Schottky junction synchronous regulation boost hierarchical CdS@Nb 2 O 5 /Nb 2 C T x for photocatalytic H 2 production. This work creates possibilities for manufacturing Nb-based MXene photocatalysts for converting solar energy and other applications.

Borophene has drawn tremendous attention in the past decade for a wide range of potential applications owing to its unique structural, optical, and electronic properties. However, applications of borophene toward next-generation nanodevices are mostly theoretical predictions, while experimental realization is still lacking due to rapid oxidation of intrinsic borophene in an air environment. Here, we have successfully prepared structurally stable and transferrable few-layer β 12 -borophane on copper foils by a typical two-zone chemical vapor deposition method, where bis(triphenylphosphine)copper tetrahydroborate was used as the boron source in a hydrogen-rich atmosphere to stabilize its structure through hydrogenation. The crystal structure of the as-prepared β 12 -borophane is in good agreement with previous reports. A fabricated photodetector based on β 12 -borophane-silicon ( n -type) Schottky junction shows good photoelectric responses to light excitations in a wide wavelength range from 365 to 850 nm. Especially, the photodetector exhibits a good photoresponsivity of around 0.48 A W -1 , a high specific detectivity of 4.39 × 10 11 jones, a high external quantum efficiency of 162%, and short response and recovery times of 115 and 121 ms under an ultraviolet light with the wavelength of 365 nm at a reverse bias of 5 V. The results show great potential applications of borophane in next-generation nanophotonic and nanoelectronic devices.

The deployment of two-dimensional (2D) materials for solar energy conversion requires scalable large-area devices. Here, we present the design, modeling, fabrication, and characterization of monolayer MoS 2 -based lateral Schottky-junction photovoltaic (PV) devices grown by using chemical vapor deposition (CVD). The device design consists of asymmetric Ti and Pt metal contacts with a work function offset to enable charge separation. These early stage devices show repeatable performance under 1 sun illumination, with V OC of 160 mV, J SC of 0.01 mA/cm 2 , power conversion efficiency of 0.0005%, and specific power of 1.58 kW/kg. An optoelectronic model for this device is developed and validated with experimental results. This model is used to understand loss mechanisms and project optimized device designs. The model predicts that a 2D PV device with ∼70 kW/kg of specific power can be achieved with minimum optimization to the current devices. By increasing the thickness of the absorber layer, we can achieve even higher performance devices. Finally, a 25 mm 2 area solar cell made with a 0.65 nm thick MoS 2 monolayer is demonstrated, showing V OC of 210 mV under 1 sun illumination. This is the first demonstration of a large-area PV device made with CVD-grown scalable 2D materials.

In this study, we present a wavelength sensor that is capable of distinguishing the spectrum in the range from ultraviolet (UV) to near-infrared (NIR) light. The filterless device is composed of two horizontally stacking PdSe 2 /20 μm Si/PdSe 2 heterojunction photodetectors with a photovoltaic (PV) behavior, which makes it possible for the device to work at 0 bias voltage. Due to the relatively small thickness of Si and the wavelength-dependent absorption coefficient, the two PdSe 2 /20 μm Si/PdSe 2 photodetectors according to theoretical simulation display a sharp contrast in distribution of the photoabsorption rate. As a result, the photocurrents of both photodetectors evolve in completely different ways with increasing wavelengths, leading to a monotonic decrease in the photocurrent ratio from 6800 to 22 when the wavelength gradually increases from 265 to 1050 nm. The corresponding relationship between both the photocurrent ratio and wavelength can be easily described by the monotonic function, which can help to precisely determine the wavelength in the range from 265 to 1050 nm, with an average relative error less than ±1.6%. It is also revealed that by slightly revising the monotonic function, the wavelength in other different temperatures can also be estimated.

Engineering of the interface for tuning the structural, functional, and electronic properties of materials via the formation of heterostructure composites exhibits immense potential in the current research scenario. This study reports a novel ternary composite synthesized by decoration of zero-dimensional Pd nanoparticles (NPs) and two-dimensional (2D) graphite oxide (GO) sheets in the UiO-66 metal-organic framework (MOF). A mixed matrix membrane was fabricated by incorporating this composite in the SPEEK polymer matrix, which exhibited higher selectivity compared to commercial Nafion 117. The synthesized composite and fabricated membranes were thoroughly characterized in terms of their chemical structures, microstructural morphologies, physicochemical, thermal, photo-electrochemical, and optical properties, ion-exchange capacity, proton conductivity, and methanol permeability. As per our knowledge, this is the first study which explores the effect of noble metal NPs and carbon 2D material simultaneously on the electronic structure of the MOF, resulting in improved selectivity. The electron-accepting nature of GO and surface plasmon resonance effect of Pd alter the energy band positions and scavenge the electrons, improving the proton conduction of the composite. The introduction of oxygen vacancies in lattice leads to efficient charge separation. The formation of a Schottky junction results in the localized electric field effect due to electron density fluctuation which aids in ion transport. The current study opens up a new route to overcome the major challenge associated with direct methanol fuel cells (DMFCs), that is, high/low methanol crossover by improving the proton conduction.

Developing high-performance dielectric absorbers, low filler loading, and a broad absorption band remains a great challenge for wireless data communication systems, household appliances, local area network, and so on. Herein, we report a facile green method to design and fabricate a copper-coated tin/reduced graphene oxide (Cu@Sn/rGO) composites with a heterojunction obtained by modifying a Schottky junction. The unique heterojunction can enable an appropriate balance between impedance and strong loss capacity. Meanwhile, it can not only promote the carrier migration but also obtain the rich interfaces. Consequently, a Cu@Sn/rGO composite with a heterojunction exhibits superior absorption intensity, far surpassing that of other absorbing materials reported. With a weight content of only 5 wt %, the maximum absorptivity reaches -49.19 dB at 6.08 GHz, and an effective absorption bandwidth (RL < -10 dB) of 13.94 GHz is achieved when the absorber's thickness ranges from 1.7 to 5.5 mm. This study provides new insights into the design and synthesis of a novel microwave absorption material with lightweight, smaller filler loading, and strong reflection loss.

Cu/TiO 2 is a well-known photocatalyst for the photocatalytic transformation of CO 2 into methane. The formation of C 2+ products such as ethane and ethanol rather than methane is more interesting due to their higher energy density and economic value, but the formation of C-C bonds is currently a major challenge in CO 2 photoreduction. In this context, we report the dominant formation of a C 2 product, namely, ethane, from the gas-phase photoreduction of CO 2 using TiO 2 nanotube arrays (TNTAs) decorated with large-sized (80-200 nm) Ag and Cu nanoparticles without the use of a sacrificial agent or hole scavenger. Isotope-labeled mass spectrometry was used to verify the origin and identity of the reaction products. Under 2 h AM1.5G 1-sun illumination, the total rate of hydrocarbon production (methane + ethane) was highest for AgCu-TNTA with a total C x H 2 x +2 rate of 23.88 μmol g -1 h -1 . Under identical conditions, the C x H 2 x +2 production rates for Ag-TNTA and Cu-TNTA were 6.54 and 1.39 μmol g -1 h -1 , respectively. The ethane selectivity was the highest for AgCu-TNTA with 60.7%, while the ethane selectivity was found to be 15.9 and 10% for the Ag-TNTA and Cu-TNTA, respectively. Adjacent adsorption sites in our photocatalyst develop an asymmetric charge distribution due to quadrupole resonances in large metal nanoparticles and multipole resonances in Ag-Cu heterodimers. Such an asymmetric charge distribution decreases adsorbate-adsorbate repulsion and facilitates C-C coupling of reaction intermediates, which otherwise occurs poorly in TNTAs decorated with small metal nanoparticles.

Halide perovskites are promising optoelectronic semiconductors. For applications in solid-state detectors that operate in low photon flux counting mode, blocking interfaces are essential to minimize the dark current noise. Here, we investigate the interface between methylammonium lead tri-iodide (MAPbI 3 ) single crystals and commonly used high and low work function metals to achieve photon counting capabilities in a solid-state detector. Using scanning photocurrent microscopy, we observe a large Schottky barrier at the MAPbI 3 /Pb interface, which efficiently blocks dark current. Moreover, the shape of the photocurrent profile indicates that the MAPbI 3 single-crystal surface has a deep fermi level close to that of Au. Rationalized by first-principle calculations, we attribute this observation to the defects due to excess iodine on the surface underpinning emergence of deep band-edge states. The photocurrent decay profile yields a charge carrier diffusion length of 10-25 μm. Using this knowledge, we demonstrate a single-crystal MAPbI 3 detector that can count single γ-ray photons by producing sharp electrical pulses with a fast rise time of <2 μs. Our study indicates that the interface plays a crucial role in solid-state detectors operating in photon counting mode.

Dual-ion electrolytes with oxygen ion and proton-conducting properties are among the innovative solid oxide electrolytes, which exhibit a low Ohmic resistance at temperatures below 550 °C. BaCo 0.4 Fe 0.4 Zr 0.1 Y 0.1 O 3-δ with a perovskite-phase cathode has demonstrated efficient triple-charge conduction (H + /O 2- /e - ) in a high-performance low-temperature solid oxide fuel cell (LT-SOFC). Here, we designed another type of triple-charge conducting perovskite oxide based on Ba 0.5 Sr 0.5 Co 0.1 Fe 0.7 Zr 0.1 Y 0.1 O 3-δ (BSCFZY), which formed a heterostructure with ionic conductor Ca 0.04 Ce 0.80 Sm 0.16 O 2-δ (SCDC), showing both a high ionic conductivity of 0.22 S cm -1 and an excellent power output of 900 mW cm -2 in a hybrid-ion LT-SOFC. In addition to demonstrating that a heterostructure BSCFZY-SCDC can be a good functional electrolyte, the existence of hybrid H + /O 2- conducting species in BSCFZY-SCDC was confirmed. The heterointerface formation between BSCFZY and SCDC can be explained by energy band alignment, which was verified through UV-vis spectroscopy and UV photoelectron spectroscopy (UPS). The interface may help in providing a pathway to enhance the ionic conductivities and to avoid short-circuiting. Various characterization techniques are used to probe the electrochemical and physical properties of the material containing dual-ion characteristics. The results indicate that the triple-charge conducting electrolyte is a potential candidate to further reduce the operating temperature of SOFC while simultaneously maintaining high performance.

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO 3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electrodegradation process. The different movabilities of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by an external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.

Two-dimensional (2D) Mo 2 C, as a new member of transition metal carbides, has many intriguing properties and potential applications in superconductors and electronic devices. The thermal stability of 2D materials is essential for the performance of the related devices, especially the ones with a vertical heterostructure. However, rare reports have demonstrated the thermal stability of Mo 2 C and the effects of thermal stability on its performance. Here, we propose a facile and controllable method to directly oxidize Mo 2 C to MoO x , forming a MoO x /Mo 2 C heterostructure. During the oxidization process, an in situ technique is employed to uncover the transformation and thermal stability of the Mo 2 C. The chemical vapor deposition Mo 2 C shows high structural stability below 550 °C in Ar or below 350 °C in O 2 , which demonstrates the high thermal stability and antioxidation of the Mo 2 C film. The metallic Mo 2 C is gradually oxidized to semiconducting MoO x as the temperature increases above 350 °C. The oxidization rate can be easily controlled by adjusting the oxidation temperature and time. Further, the obtained MoO x /Mo 2 C vertical hybrid structure shows obvious Schottky junction behaviors, strongly indicating the perfect interfacial contact between the component layers. This work offers a new strategy for the controllable fabrication of high-quality 2D heterostructures.

Due to the complexity of harmful wastewater components, environmental and multifunctional materials are required for sewage purification. In this paper, a novel kidney-bean-skin-like hydrophilic porous polyacrylonitrile/reduced graphene oxide- g -poly(amidoxime)-loaded Ag + (H-PPAN/rGO- g -PAO@Ag + /Ag) composite nanofiber membrane was fabricated by combining electrospinning and hydrolysis methods. The spinning solution was pumped at a rate of 0.4 mL/h with the voltage set at a constant value of 23 kV. Then, some of the -CN groups switched to hydrophilic -COOH groups via a hydrolysis method, which acts as a linker of GO- g -PAN, Ag + , and the polyacrylonitrile (PAN) matrix. A further step of chelation and thermal treatment were used for generating Schottky junctions between rGO- g -PAO@Ag + and Ag. After five-cycle tests, it exhibited outstanding mechanical properties ensuring the filtration and purification performance of the H-PPAN/rGO- g -PAO@Ag + /Ag composite nanofiber membrane (i.e., the tensile strength was still 7.21 MPa, and the elongation was 61.53%) for simulated wastewater. The methods of thermal treatment and high-pressure Hg lamp irradiation promoted the reduction of GO to rGO and Ag + to Ag particles, which endows the final product H-PPAN/rGO- g -PAO@Ag + /Ag with excellent photocatalytic and bactericidal properties. Its catalytic efficiency for dyes benzoic acid (BA), Rhodamine B (RhB), methylene blue (MB), and methyl orange (MO) was up to 99.8, 98, 95, and 91%. The antibacterial rate was 100% against Escherichia coli and 99% against Staphylococcus aureus . More importantly, the photocatalytic and antibacterial PAN-based nanofiber membrane can be simply scaled up, which provides the membrane with great potential in highly efficient wastewater treatment and augmenting water supply.

Graphene (Gr) presents promising applications in regulating the osteogenic differentiation of bone marrow mesenchymal stem cells (BMSCs). Light illumination is regarded as a spatiotemporally controllable, easily applicable, and noninvasive mean to modulate material responses. Herein, Gr-transferred silicon (Gr/Si) with a Schottky junction is utilized to evaluate the visible-light-promoted osteogenic differentiation of BMSCs. Under light illumination, light-induced charges, owing to the formation of the Schottky junction at the interface of Gr and Si, accumulated on the surface and then changed the surface potential of Gr/Si. The Schottky junction and surface potential at the interface of Gr and Si was measured by photovoltaic test and scanning Kelvin probe microscopy. Alkaline phosphatase (ALP) activity and quantitative real-time polymerase chain reaction (PCR) measurement showed that such variations of surface improved the osteogenic differentiation of BMSCs, and the activation of the voltage-gated calcium channels through surface potential and accumulation of cytosolic Ca 2+ could be the reason. Moreover, X-ray photoelectron spectroscopy characterization showed that surface charge could also affect BMSCs differentiation through the promotion or inhibition of the adsorption of osteogenic growth factors. Such light-promoted osteogenic differentiation of BMSCs on Gr/Si may have huge potential for biomedical materials or devices for bone regeneration application.

A Schottky barrier is a double-edged sword in electronic and optoelectronic devices, especially devices based on two-dimensional materials. It may restrict the carrier transport in devices, but it can also realize multifunctional devices by architecture design. We designed a simple but novel device structure based on theWSe 2 -Cr Schottky junction with an asymmetric Schottky contact area of the source and drain. A significant rectification ratio over 10 5 and multiple rectifying states (e.g., full pass, forward pass, off, and backward pass) were achieved in the single Schottky junction tuned by gate voltage. Furthermore, switching characteristic, rectification characteristic, and amplitude of a sin wave can be effectively modulated by the electrical field or light illumination in a signal process circuit based on the WSe 2 -Cr Schottky junction. The highly tunable Schottky junction working as a multimode signal processor unit has great potential in future optoelectronic-integrated chips.

We report on the investigation of the Schottky barrier (SB) formed at the junction between a metal-free graphene monolayer and Ge semiconductor substrate in the as-grown epitaxial graphene/Ge(100) system. In order to preserve the heterojunction properties, we defined submicron size graphene/Ge junctions using the scanning probe microscopy lithography in the local oxidation configuration, a low-invasive processing approach capable of inducing spatially controlled electrical separations among tiny graphene regions. Characteristic junction parameters were estimated from I - V curves obtained using conductive-atomic force microscopy. The current-voltage characteristics showed a p-type Schottky contact behavior, ascribed to the n-type to p-type conversion of the entire Ge substrate due to the formation of a large density of acceptor defects during the graphene growth process. We estimated, for the first time, the energy barrier height in the as-grown graphene/Ge Schottky junction (φ B ≈ 0.45 eV) indicating an n-type doping of the graphene layer with a Fermi level ≈ 0.15 eV above the Dirac point. The SB devices showed ideality factor values around 1.5 pointing to the high quality of the heterojunctions.

A proof-of-concept strategy for significant enhancement of hydrogen evolution reaction (HER) performance of transition metals via construction of a metal/semiconductor Schottky junction is presented. The decoration of low-cost commercial TiO 2 nanoparticles on the surface of microscale Co dendrites causes a significant charge transfer across the Co/TiO 2 Schottky interface and enhances the local electron density at the Co surface, confirmed by X-ray photoelectron spectroscopy results and density functional theory calculations. The Co/TiO 2 Schottky catalyst displays superior HER activity with a turnover frequency of 0.052 s -1 and an exchange current density of 79 μA cm -2 , which are about 4.3 and 4.0 times greater than that of pristine Co, respectively. Moreover, the Co/TiO 2 Schottky catalyst displays excellent electrochemical durability for long-term operation in both alkaline solution and high saline solution. Theoretical calculations suggest that the Schottky junction plays an important role to optimize hydrogen adsorption free energy (Δ G H* Schottky catalyst. This study of modulating the electronic structure of the catalysts via the Schottky junction could provide valuable insights for designing and synthesizing low-cost, high-performance electrocatalysts.2 Schottky catalyst. This study of modulating the electronic structure of the catalysts via the Schottky junction could provide valuable insights for designing and synthesizing low-cost, high-performance electrocatalysts.

Single-layer fuel cells (SLFCs) based on mixed semiconductors and ionic conductors demonstrate  simplified material preparation and fabrication procedure and possess high performance potentially. However, the operational stability and principle of SLFCs have not yet been convinced of either commercialization or fundamental interests. We hereby report on the employment of a perovskite oxide-based phase-structured redox-stable semiconductor prior to determining a possible solution that improves the durability of the SLFC. Feasible working principles are established and an in-depth understanding of the short-circuit-free phenomenon in SLFCs with the mixed ionic and electronic conductors is provided. Additionally, a smart material design and cell structure processing are also proposed. An extended nonstop testing period of up to 2 days confirms the project feasibility and improved durability of the SLFCs, achieved by replacing the unstable lithiated oxide phase with redox-stable perovskite oxide, though the electrochemical performance is sacrificed. The precipitated metal/alloy nanoparticle on perovskite oxide not only improves the electrode reaction kinetics but also facilitates the charge separation and ionic conduction in SLFCs, consequently enhancing the fuel cell performance and electrical efficiency. The results confirmed the potential of stable operation for future practical deployment of SLFCs via appropriate selection of material and cell structure design. It is greatly believed that the physical junction plays a crucial role in overcoming the internal short-circuit issue of SLFCs.

A metal-catalyst-free method for the direct growth of patterned graphene on an insulating substrate is reported in this paper. Parylene N is used as the carbon source. The surface molecule layer of parylene N is cross-linked by argon plasma bombardment. Under high-temperature annealing, the cross-linking layer of parylene N is graphitized into nanocrystalline graphene, which is a process that transforms organic to inorganic and insulation to conduction, while the parylene N molecules below the cross-linking layer decompose and vaporize at high temperature. Using this technique, the direct growth of a graphene film in a large area and with good uniformity is achieved. The thickness of the graphene is determined by the thickness of the cross-linking layer. Patterned graphene films can be obtained directly by controlling the patterns of the cross-linking region (lithography-free patterning). Graphene-silicon Schottky junction photodetectors are fabricated using the as-grown graphene. The Schottky junction shows good performance. The application of direct-grown graphene in optoelectronics is achieved with a great improvement of the device fabrication efficiency compared with transferred graphene. When illuminated with a 792 nm laser, the responsivity and specific detectivity of the detector measured at room temperature are 275.9 mA/W and 4.93 × 10 9 cm Hz 1/2 /W, respectively.

Vertically aligned TiO 2 nanorods (NRs) were synthesized on a fluorine-doped tin oxide-deposited glass substrate by the hydrothermal method. A Schottky junction ultraviolet photodetector was fabricated by spin-coating of the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer on TiO 2 NRs. For the improvement of device performance, the electrical conductivity of the polymer was increased by adding dimethyl sulfoxide (DMSO) and concentrated H 2 SO 4 acid. The diode parameters, i.e., work function, series resistance, and ideality factor, were studied for all devices. Photoresponse behavior of the TiO 2 nanorod/PEDOT:PSS junction was studied upon illumination of white light of intensity 80 mW/cm 2 . Our acid-treated sample demonstrated the highest photocurrent value, which is 10 times larger than that of DMSO-treated and 39 times larger than that of the untreated sample. Our acid-treated device showed superior external quantum efficiency (∼12 560%), responsivity (∼34.43 A/W), and detectivity (∼1.6 × 10 11 Hz 1/2 /W) at ∼340 nm wavelength under -1 V bias.

A significant improvement in the power conversion efficiency (PCE) and the environmental stability of n-Graphene/p-Si solar cells is indicated through effective n-doping of graphene, using low work function oxide capping layers. AlO x , deposited through atomic layer deposition, is particularly effective for such doping and in addition serves as an antireflection coating and a cell encapsulating layer. It is shown that the related charge transfer doping and interfacial engineering was crucial to achieve a record PCE of 12.5%. The work indicates a path forward, through work function engineering, for further efficiency gains in Gr-based solar cells.

Ultrathin metal-organic framework (MOF) nanosheets with large active sites and superior catalytic properties have attracted extensive interests and are promising for oxygen evolution reaction (OER) for water splitting. Herein, we report a novel and highly efficient hetero-nanostructured OER system based on plasmonic Au nanoparticles (NPs) and ultrathin semiconductor-like Co/Ni-MOF nanosheets. The OER performance of the hybrid system can be tuned (by varying the AuNP sizes) and the oxidation current significantly enhanced to ∼10-fold with incorporated AuNPs of ∼20 nm. An onset overpotential (η) of only 0.33 V was achieved under light illumination, which was much lower than the pure Ni/Co-MOF (0.48 V). Further analysis revealed the key role of the plasmonically induced hot holes (via electric- and combined photoexcitation) in boosting the OER performance of the resulting system. The finding and the proposed concept provide a new insight for understanding the plasmon enhancements in catalysis and may open a new avenue to design MOF hetero-nanostructures with high performance for photoelectrocatalysis.

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

In this work, we demonstrate the effectiveness of Ag nanowires (AgNWs) to design a high-speed broadband photodetector. A simple AgNW solution was spin-coated on a Si substrate to form a Schottky junction. The junction properties were investigated using current-voltage characteristics and Mott-Schottky analysis. The present device had a remarkably fast response speed, e.g., rising time τ r = 784 ns and fall time τ f = 92 μs, with good reproducibility over a wide range of switching frequencies (50 Hz-50 kHz). Such a high performance was attributed to the strong electric field created at the AgNW/Si interface without an external electric field, enabling the efficient separation of photogenerated electron-hole pairs. The present study will open a new avenue to design future optoelectronic devices and energy devices including solar cells.

Construction of a metal-semiconductor heterojunction is a promising method to improve heterogeneous photocatalysis for various reactions. Although the structure and photocatalytic performance of such a catalyst system have been extensively studied, few reports have demonstrated the effect of interface orientation at the metal-semiconductor junction on junction-barrier bending and the electronic transport properties. Here, we construct a Pt/PbS heterojunction, in which Pt nanoparticles are used as highly active catalysts and PbS nanocrystals (NCs) with well-controlled shapes are used as light-harvesting supports. Experimental results show that the photoelectrocatalytic activities of the Pt/PbS catalyst are strongly dependent on the contacting facets of PbS at the junction. Pt/octahedral PbS NCs with exposed PbS(111) facets show the highest photoinduced enhancement of hydrogen evolution reaction activity, which is ∼14.38 times higher than that of the ones with only PbS(100) facets (Pt/cubic PbS NCs). This enhancement can further be rationalized by the different energy barriers of the Pt/PbS Schottky junction due to the specific band structure and electron affinity, which is also confirmed by the calculations based on density functional theory. Therefore, controlling the contacting interfaces of a metal/semiconductor material may offer an effective approach to form the desired heterojunction for optimization of the catalytic performance.

In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

We developed Schottky junction photovoltaic cells based on multilayer Mo 1-x W x Se 2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo 0.5 W 0.5 Se 2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe 2 and WSe 2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo 0.5 W 0.5 Se 2 devices. Furthermore, we showed that Mo 0.5 W 0.5 Se 2 -based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

Gas sensors play an important role in numerous fields, covering a wide range of applications, including intelligent systems and detection of harmful and toxic gases. Even though they have attracted much attention, the response time on the order of seconds to minutes is still very slow. To circumvent the existing problems, here, we provide a seminal attempt with the integration of graphene, semiconductor, and an addition sieve layer forming a nanocomposite gas sensor with ultrahigh sensitivity and ultrafast response. The designed sieve layer has a suitable band structure that can serve as a blocking layer to prevent transfer of the charges induced by adsorbed gas molecules into the underlying semiconductor layer. We found that the sensitivity can be reduced to the parts per million level, and the ultrafast response of around 60 ms is unprecedented compared with published graphene-based gas sensors. The achieved high performance can be interpreted well by the large change of the Fermi level of graphene due to its inherent nature of the low density of states and blocking of the sieve layer to prevent charge transfer from graphene to the underlying semiconductor layer. Accordingly, our work is very useful and timely for the development of gas sensors with high performance for practical applications.

The polarity of the charge carriers injected through Schottky junctions of α-phase molybdenum ditelluride (α-MoTe2) and various metals was characterized. We found that the Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers (electron or hole) injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2. From the estimation of the Schottky barrier heights, we obtained p-type carrier (hole) injection from a Pt/α-MoTe2 junction with a Schottky barrier height of 40 meV at the valence band edge. n-Type carrier (electron) injection from Ti/α-MoTe2 and Ni/α-MoTe2 junctions was also observed with Schottky barrier heights of 50 and 100 meV, respectively, at the conduction band edge. In addition, enhanced ambipolarity was demonstrated in a Pt-Ti hybrid contact with a unique structure specially designed for polarity-reversible transistors, in which Pt and Ti electrodes were placed in parallel for injecting both electrons and holes.

Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.

Effectively harvesting light to generate long-lived charge carriers to suppress the recombination of electrons and holes is crucial for photocatalytic reactions. Exposing the highly active facets has been regarded as a powerful approach to high-performance photocatalysts. Herein, a hybrid comprised of {001} facets of TiO2 nanosheets and layered Ti3C2, an emerging 2D material, was synthesized by a facile hydrothermal partial oxidation of Ti3C2. The in situ growth of TiO2 nanosheets on Ti3C2 allows for the interface with minimized defects, which was demonstrated by high-resolution transmission electron microscopy and density functional theory calculations. The highly active {001} facets of TiO2 afford high-efficiency photogeneration of electron-hole pairs, meanwhile the carrier separation is substantially promoted by the hole trapping effect by the interfacial Schottky junction with 2D Ti3C2 acting as a reservoir of holes. The improved charge separation and exposed active facets dramatically boost the photocatalytic degradation of methyl orange dye, showing the promise of 2D transition metal carbide for fabricating functional catalytic materials.

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

We successfully prepared Au@ZnO core-shell nanoparticles (CSNPs) by a facile low-temperature solution route and studied its gas-sensing properties. The obtained Au@ZnO CSNPs were carefully characterized by X-ray diffraction, transmission electron microscopy (TEM), high-resolution TEM, and UV-visible spectroscopy. Mostly spherical-shaped Au@ZnO CSNPs were formed by 10-15 nm Au NPs in the center and by 40-45 nm smooth ZnO shell outside. After the heat-treatment process at 500 °C, the crystallinity of ZnO shell was increased without any significant change in morphology of Au@ZnO CSNPs. The gas-sensing test of Au@ZnO CSNPs was examined at 300 °C for various gases including H2 and compared with pure ZnO NPs. The sensor Au@ZnO CSNPs showed the high sensitivity and selectivity to H2 at 300 °C. The response values of Au@ZnO CSNPs and pure ZnO NPs sensors to 100 ppm of H2 at 300 °C were 103.9 and 12.7, respectively. The improved response of Au@ZnO CSNPs was related to the electronic sensitization of Au NPs due to Schottky barrier formation. The high selectivity of Au@ZnO CSNPs sensor toward H2 gas might be due to the chemical as well as catalytic effect of Au NPs.

In the present work, a ZnO nanowire array/reduced graphene oxide film hybrid nanostructure was realized, and the photovoltaic responses from the visible to the near-infrared range were investigated. Compared with the pure ZnO nanowire array and rGO thin film, the hybrid composite exhibited a fast and greatly enhanced broadband photovoltaic response that resulted from the formation of interfacial Schottky junctions between ZnO and rGO.