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Polyimide is actively applied in various industrial fields because of its strong mechanical properties, owing to the interactions between the polymer chains. Fully aromatic imide structures exhibit high glass-transition temperatures due to the strong interactions between their chains, which hinder chain mobility. Therefore, preparing a material that exhibits self-healing at a low temperature of ≤100 °C and good mechanical properties is challenging. Thus, we prepared imides with four-component semiaromatic structures by adjusting the contents of 4,4'-(hexafluoroisopropylidene)diphthalic anhydride and 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride) to yield four-component self-healable colorless polyimides (f-SH-CPIs) with novel structures, flexibilities, good mechanical properties, and low healing temperatures. The flexibilities and distances between the polymer chains, as the basis of the trade-off relationship between the mechanical properties and healing efficiency, were controlled. These materials may be used as substrates in wearable devices and multilayer insulation that may protect from space dust, cosmic rays, and satellite fragments.

Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS 2 , may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS 2 channel. A double-gated MoS 2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 10 4 on-off current ratio, a 70 mV dec -1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS 2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS 2 transistors with an electrostatically highly doped channel.

Two-dimensional transition-metal dichalcogenide (TMD) materials have attracted increasing attention in efforts to overcome fundamental issues faced by the complementary metal-oxide-semiconductor industry. Multilayer TMD materials such as MoS 2 can be used for high-performance transistor-based applications; the drive currents are high and the materials handle low-frequency (LF) noise well. We fabricated double-gated multilayer MoS 2 transistors using the h-BN dielectric for the top gate and silicon dioxide for the bottom gate. We systemically investigated the bottom gate voltage ( V b )-controlled electrical characteristics and the top/bottom interface-coupling effects. The effective thickness of the MoS 2 channel ( t MoS 2 _eff ) was well modulated by V b , and t MoS 2 _eff reduction by negative V b dramatically improved the I on / I off ratio. Numerical simulation and analytical modeling with a variation of the depletion depth under different bias conditions verified the experimental results. We were also the first to observe V b -tuned LF noise characteristics. Here, we discuss the V b -affected series resistance and carrier mobility in detail. Our findings greatly enhance the understanding of how double-gated multilayer MoS 2 transistors operate and will facilitate performance optimization in the real world.

For use in flexible, printable, wearable electronics, Schottky-barrier field-effect transistors (SB-FETs) with various channel materials including low-dimensional nanomaterials have been considered so far due to their comparatively simple and cost-effective integration scheme free of junction and channel dopants. However, the electric conduction mechanism and the scaling properties underlying their performance differ significantly from those of conventional metal-oxide-semiconductor (MOS) field-effect transistors. Indeed, an understanding of channel length scaling and drain bias impact has not been elucidated sufficiently. Here, multiple ambipolar SB-FETs with different channel lengths have been fabricated on a single silicon nanowire ensuring a constant nanowire diameter. Their length scaling behavior is analyzed through drain current and transconductance contour maps, each depending on the drain and gate bias. The reduced gate control and extended drain field effect on Schottky junctions were observed in short channels. Activation energy measurements showed lower sensitive behavior of the Schottky barrier to gate bias in the short-channel device and confirmed the thinning of Schottky barrier width for electrons at the source interface with drain bias.

We synthesized uniform CuInS 2 /ZnS nanocubes by adjusting reaction parameters at the ZnS growth stage. Higher temperature and zinc concentration were shown to drive resultant crystals to have cubic morphology, which could be ascribed to the facet-dependent ligand dynamics on the crystal surface and concomitantly preferred directions of crystal growth. It was found that these nanocubes exhibit sensitive responses, as of photoluminescence quenching, toward hydrogen peroxide, compared to pyramid-shaped nanocrystals. The origin of quenching was further analyzed to be the oxidation of thiolate ligands that leaves the quenching center on the surface. It was noted that the quenched photoluminescence could be fully recovered by introducing additional ligand molecules into the system. Being adopted in the shape-controlled crystal growth, the ligand-to-crystal interaction was shown to still govern the interfacial reaction, the oxidation by hydrogen peroxide, of faceted crystals in our system. It turns out that the reactivity at the crystal surface depends on the exposed facets, especially induced by shape control, and the weak ligand-binding nature of the nanocube renders it vulnerable to the surface reaction.

Imidazolium ionic side-group-containing fluorene-based conjugated polyelectrolytes (CPEs) with different π-conjugated structures, poly[(9,9-bis(8'-(3″-methyl-1″-imidazolium)octyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] dibromide (F8im-Br) and poly[(9,9-bis(8'-(3″-methyl-1″-imidazolium)octyl)-2,7-fluorene)-alt-(benzo(2,1,3)thiadiazol-4,8-diyl) dibromide (F8imBT-Br), are synthesized and utilized as an electron injection layer (EIL) in green-emitting F8BT polymer light-emitting diodes (PLEDs). Both CPE EIL devices significantly outperform Ca cathode devices; 17.9 cd A(-1) (at 3.8 V) and 16.6 lm W(-1) (at 3.0 V) for F8imBT-Br devices, 11.1 cd A(-1) (at 4.2 V) and 9.1 lm W(-1) (at 3.4 V) for F8im-Br devices, and 7.2 cd A(-1) (at 3.6 V) and 7.0 lm W(-1) (at 3.0 V) for Ca devices. Importantly, unlike the F8im-Br EIL devices, F8imBT-Br PLEDs exhibit much faster electroluminescence turn-on times (<10 μs) despite both EILs possessing the same tethered imidazolium and mobile bromide ions. The F8imBT-Br devices represent, to the best of our knowledge, the highest efficiency in thin (70 nm) single-layer F8BT PLEDs in conventional device architecture with the fastest EL response time using CPE EIL with mobile ions. Our results clearly indicate the importance of an additional factor of EIL materials, specifically the conjugated backbone structure, to determine the device efficiency and response times.