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The use of MXene materials in perovskite solar cells (PSCs) has received significant interest due to their distinct features that result from the termination of functional groups and the oxidation of MXene. Herein, we have used photoconductive atomic force microscopy (pcAFM) to map the local (nanoscale) photovoltaic performances of the Ti 3 C 2 T x MXene nanosheet-integrated TiO 2 (MXene@TiO 2 ) electron transport layer-based PSCs to determine the influence of the treatment on the microscopic charge flow inside the devices. At different applied voltages, the morphology and current have been simultaneously measured with nanoscale resolution from the top surfaces of the solar cells without back contacts. The PSCs based on MXene@TiO 2 exhibit more enhanced current flow across the grains than the only TiO 2 -based PSCs. At zero applied bias, the average local photocurrent for MXene-integrated PSCs is several times higher than the reference PSCs and decreases gradually when the positive bias is increased until the open circuit voltage. Considerable differences were also observed in the short circuit current among different locations that appear identical in AFM topography. Our findings reveal the potential of MXene-integrated ETLs to enhance the nanoscale photoconduction and inherent characteristics of the active layers, thereby improving the performance of the polycrystalline photovoltaic devices.

The market for flexible, hybrid, and printed electronic systems, which can appear in everything from sensors and wearables to displays and lighting, is still uncertain. What is clear is that these systems are appearing every day, enabling devices and systems that can, in the near future, be crumpled up and tucked in our pockets. Within this context, cellulose-based modified nanopapers were developed to serve both as a physical support and a gate dielectric layer in field-effect transistors (FETs) that are fully recyclable. It was found that the impregnation of those nanopapers with sodium (Na + ) ions allows for low operating voltage FETs (<3 V), with mobility above 10 cm 2 V -1 s -1 , current modulation surpassing 10 5 , and an improved dynamic response. Thus, it was possible to implement those transistors into simple circuits such as inverters, reaching a clear discrimination between logic states. Besides the overall improvement in electrical performance, these devices have shown to be an interesting alternative for reliable, sustainable, and flexible electronics, maintaining proper operation even under stress conditions.

Laser irradiation of polymeric materials has drawn great attention as a fast, simple, and cost-effective method for the formation of porous graphene films that can be subsequently fabricated into low-cost and flexible electronic and energy-storage devices. In this work, we report a systematic study of the formation of laser-induced graphene (LIG) with sheet resistances as low as 9.4 Ω/sq on parylene-C ultrathin membranes under a CO 2 infrared laser. Raman analysis proved the formation of the multilayered graphenic material, with I D / I G and I 2D / I G peak ratios of 0.42 and 0.65, respectively. As a proof of concept, parylene-C LIG was used as the electrode material for the fabrication of ultrathin, solid-state microsupercapacitors (MSCs) via a one-step, scalable, and cost-effective approach, aiming at future flexible and wearable applications. The produced LIG-MSC on parylene-C exhibited good electrochemical behavior, with a specific capacitance of 1.66 mF/cm 2 and an excellent cycling stability of 96% after 10 000 cycles (0.5 mA/cm 2 ). This work allows one to further extend the knowledge in LIG processes, widening the group of precursor materials as well as promoting future applications. Furthermore, it reinforces the potential of parylene-C as a key material for next-generation biocompatible and flexible electronic devices.

Renewable cellulose substrates with submicron- and nanoscale structures have revived interest in paper electronics. However, the processes behind their production are still complex and time- and energy-consuming. Besides, the weak electrolytic properties of cellulose with submicron- and nanoscale structures have hindered its application in transistors and integrated circuits with low-voltage operation. Here, we report a simple, low-cost approach to produce flexible ionic conductive cellulose mats using solution blow spinning, which are used both as dielectric interstrate and substrate in low-voltage devices. The electrochemical properties of the cellulose mats are tuned through infiltration with alkali hydroxides (LiOH, NaOH, or KOH), enabling their application as dielectric and substrate in flexible, low-voltage, oxide-based field-effect transistors and pencil-drawn resistor-loaded inverters. The transistors exhibit good transistor performances under operation voltage below 2.5 V, and their electrical performance is strictly related to the type of alkali ionic specie incorporated. Devices fabricated on K + -infiltrated cellulose mats present the best characteristics, indicating pure capacitive charging of the semiconductor. The pencil-drawn load resistor inverter presents good dynamic performance. These findings may pave the way for a new generation of low-power, wearable electronics, enabling concepts such as the "Internet of Things".

The ability to synthesize laser-induced graphene (LIG) on cellulosic materials such as paper opens the door to a wide range of potential applications, from consumer electronics to biomonitoring. In this work, strain and bending sensors fabricated by irradiation of regular filter paper with a CO 2 laser are presented. A systematic study of the influence of the different process parameters on the conversion of cellulose fibers into LIG is undertaken, by analyzing the resulting morphology, structure, conductivity, and surface chemistry. The obtained material is characterized by porous electrically conductive weblike structures with sheet resistances reaching as low as 32 Ω sq -1 . The functionality of both strain (gauge factor of ≈42) and bending sensors is demonstrated for different sensing configurations, emphasizing the versatility and potential of this material for low-cost, sustainable, and environmentally friendly mechanical sensing.

The plasmonic properties of gold nanoparticles (AuNPs) are a promising tool to develop sensing alternatives to traditional, enzyme-catalyzed reactions. The need for sensing alternatives, especially in underdeveloped areas of the world, has given rise to the application of nonenzymatic sensing approaches paired with cellulosic substrates to biochemical analysis. Herein, we present three individual, low-step, wet-chemistry, colorimetric assays for three target biomarkers, namely, glucose, uric acid, and free cholesterol, relevant in diabetes control and their translation into paper-based assays and microfluidic platforms for multiplexed analysis. For glucose determination, an in situ AuNPs synthesis approach was applied into the developed μPAD, giving semiquantitative measures in the physiologically relevant range. For uric acid and cholesterol determination, modified AuNPs were used to functionalize paper with a gold-on-paper approach with the optical properties changing based on different aggregation degrees and hydrophobic properties of particles dependent on analyte concentration. These paper-based assays show sensitivity ranges and limits of detection compatible for target analyte level determination and detection limits comparable to those of similar enzymatic, colorimetric systems, relying only on plasmonic transduction without the need for enzymatic activity or other chromogenic substrates. The resulting paper-based assays were integrated into a single 3D, multiplex paper-based device using paper microfluidics, showing the capability for performing different colorimetric assays with distinct requirements in terms of sample flow and sample uptake in test zones using a combination of both horizontal and vertical flows inside the same device. The presented device allows for multiparametric, colorimetric measures of different metabolite levels from a single complex sample matrix drop using digital color analysis, showing the potential for development of low-cost, low-complexity tools for diagnostics toward the point-of-care.

The current trend for smart, self-sustainable, and multifunctional technology demands for the development of energy harvesters based on widely available and environmentally friendly materials. In this context, ZnSnO 3 nanostructures show promising potential because of their high polarization, which can be explored in piezoelectric devices. Nevertheless, a pure phase of ZnSnO 3 is hard to achieve because of its metastability, and obtaining it in the form of nanowires is even more challenging. Although some groups have already reported the mixing of ZnSnO 3 nanostructures with polydimethylsiloxane (PDMS) to produce a nanogenerator, the resultant polymeric film is usually flat and does not take advantage of an enhanced piezoelectric contribution achieved through its microstructuration. Herein, a microstructured composite of nanowires synthesized by a seed-layer free hydrothermal route mixed with PDMS (ZnSnO 3 @PDMS) is proposed to produce nanogenerators. PFM measurements show a clear enhancement of d 33 for single ZnSnO 3 versus ZnO nanowires (23 ± 4 pm/V vs 9 ± 2 pm/V). The microstructuration introduced herein results in an enhancement of the piezoelectric effect of the ZnSnO 3 nanowires, enabling nanogenerators with an output voltage, current, and instantaneous power density of 120 V, 13 μA, and 230 μW·cm -2 , respectively. Even using an active area smaller than 1 cm 2 , the performance of this nanogenerator enables lighting up multiple LEDs and other small electronic devices, thus proving great potential for wearables and portable electronics.

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

In the past decade, solution-based dielectric oxides have been widely studied in electronic applications enabling the use of low-cost processing technologies and device improvement. The most promising are the high-κ dielectrics, like aluminum (AlO x ) and hafnium oxide (HfO x ), that allow an easier trap filling in the semiconductor and the use of low operation voltage. However, in the case of HfO x , a high temperature usually is needed to induce a uniform and condensed film, which limits its applications in flexible electronics. This paper describes how to obtain HfO x dielectric thin films and the effect of their implementation in multilayer dielectrics (MLD) at low temperatures (150 °C) to apply in thin film transistors (TFTs) using the combination of solution combustion synthesis (SCS) and ultraviolet (UV) treatment. The single layers and multilayers did not show any trace of residual organics and exhibited a small surface roughness (<1.2 nm) and a high breakdown voltage (>2.7 MV·cm -1 ). The resulting TFTs presented a high performance at a low operation voltage (<3 V), with high saturation mobility (43.9 ± 1.1 cm 2 ·V -1 ·s -1 ), a small subthreshold slope (0.066 ± 0.010 V·dec -1 ), current ratio of 1 × 10 6 and a good idle shelf life stability after 2 months. To our knowledge, the results achieved surpass the actual state-of-the-art. Finally, we demonstrated a low-voltage diode-connected inverter using MLD/IGZO TFTs working with a maximum gain of 1 at 2 V.

Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec -1 and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In 2 O 3 ) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1).

We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties of In2O3 thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrOx thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (∼1 × 10(-9) A/cm(2) at 2 MV/cm), and a high breakdown electric field (∼7.2 MV/cm). On the basis of its implementation as the gate insulator, the In2O3 TFTs based on ZrOx annealed at 250 °C exhibit an on/off current ratio larger than 10(7), a field-effect mobility of 23.6 cm(2)/V·s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that "aqueous-route" In2O3 TFTs based on a solution-processed ZrOx dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.

pH is a vital physiological parameter that can be used for disease diagnosis and treatment as well as in monitoring other biological processes. Metal/metal oxide based pH sensors have several advantages regarding their reliability, miniaturization, and cost-effectiveness, which are critical characteristics for in vivo applications. In this work, WO3 nanoparticles were electrodeposited on flexible substrates over metal electrodes with a sensing area of 1 mm(2). These sensors show a sensitivity of -56.7 ± 1.3 mV/pH, in a wide pH range of 9 to 5. A proof of concept is also demonstrated using a flexible reference electrode in solid electrolyte with a curved surface. A good balance between the performance parameters (sensitivity), the production costs, and simplicity of the sensors was accomplished, as required for wearable biomedical devices.