1. Low-Temperature Synthesis of WSe 2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons.
- Author
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Nibhanupudi SST, Roy A, Chowdhury S, Schalip R, Coupin MJ, Matthews KC, Alam MH, Satpati B, Movva HCP, Luth CJ, Wu S, Warner JH, and Banerjee SK
- Abstract
Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe
2 ) via the selenization of the W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films of 2D TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and different spectroscopy methods. Memristors fabricated using the grown WSe2 film are leveraged to realize a novel compact neuron circuit that can be reconfigured to enable homeostasis.- Published
- 2024
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