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Carbon perovskite solar cells (C-PSCs), using carbon-based counter electrodes (C-CEs), promise to mitigate instability issues while providing solution-processed and low-cost device configurations. In this work, we report the fabrication and characterization of efficient paintable C-PSCs obtained by depositing a low-temperature-processed graphene-based carbon paste atop prototypical mesoscopic and planar n–i–p structures. Small-area (0.09 cm2) mesoscopic C-PSCs reach a power conversion efficiency (PCE) of 15.81% while showing an improved thermal stability under the ISOS-D-2 protocol compared to the reference devices based on Au CEs. The proposed graphene-based C-CEs are applied to large-area (1 cm2) mesoscopic devices and low-temperature-processed planar n–i–p devices, reaching PCEs of 13.85 and 14.06%, respectively. To the best of our knowledge, these PCE values are among the highest reported for large-area C-PSCs in the absence of back-contact metallization or additional stacked conductive components or a thermally evaporated barrier layer between the charge-transporting layer and the C-CE (strategies commonly used for the record-high efficiency C-PSCs). In addition, we report a proof-of-concept of metallized miniwafer-like area C-PSCs (substrate area = 6.76 cm2, aperture area = 4.00 cm2), reaching a PCE on active area of 13.86% and a record-high PCE on aperture area of 12.10%, proving the metallization compatibility with our C-PSCs. Monolithic wafer-like area C-PSCs can be feasible all-solution-processed configurations, more reliable than prototypical perovskite solar (mini)modules based on the serial connection of subcells, since they mitigate hysteresis-induced performance losses and hot-spot-induced irreversible material damage caused by reverse biases.

Solution-processed hybrid bromide perovskite light-emitting-diodes (PLEDs) represent an attractive alternative technology that would allow overcoming the well-known severe efficiency drop in the green spectrum related to conventional LEDs technologies. In this work, we report on the development and characterization of PLEDs fabricated using, for the first time, a mesostructured layout. Stability of PLEDs is a critical issue; remarkably, mesostructured PLEDs devices tested in ambient conditions and without encapsulation showed a lifetime well-above what previously reported with a planar heterojunction layout. Moreover, mesostructured PLEDs measured under full operative conditions showed a remarkably narrow emission spectrum, even lower than what is typically obtained by nitride- or phosphide-based green LEDs. A dynamic analysis has shown fast rise and fall times, demonstrating the suitability of PLEDs for display applications. Combined electrical and advanced structural analyses (Raman, XPS depth profiling, and ToF-SIMS 3D analysis) have been performed to elucidate the degradation mechanism, the results of which are mainly related to the degradation of the hole-transporting material (HTM) and to the perovskite-HTM interface.

The use of solution processes to fabricate perovskite solar cells (PSCs) represents a winning strategy to reduce capital expenditure, increase the throughput, and allow for process flexibility needed to adapt PVs to new applications. However, the typical fabrication process for PSC development to date is performed in an inert atmosphere (nitrogen), usually in a glovebox, hampering the industrial scale-up. In this work, we demonstrate, for the first time, the use of double-cation perovskite (forsaking the unstable methylammonium (MA) cation) processed in ambient air by employing potassium-doped graphene oxide (GO-K) as an interlayer, between the mesoporous TiO2 and the perovskite layer and using infrared annealing (IRA). We upscaled the device active area from 0.09 to 16 cm2 by blade coating the perovskite layer, exhibiting power conversion efficiencies (PCEs) of 18.3 and 16.10% for 0.1 and 16 cm2 active area devices, respectively. We demonstrated how the efficiency and stability of MA-free-based perovskite deposition in air have been improved by employing GO-K and IRA.