1. Topological Insulator Bi2Se3/Si-Nanowire-Based p–n Junction Diode for High-Performance Near-Infrared Photodetector
- Author
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Kalyan Kumar Chattopadhyay, Biswajit Das, Biplab Chatterjee, Nirmalya Sankar Das, and Samrat Sarkar
- Subjects
Materials science ,business.industry ,Nanowire ,Photodetector ,Heterojunction ,02 engineering and technology ,Substrate (electronics) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Field emission microscopy ,Topological insulator ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,p–n junction ,Diode - Abstract
Chemically derived topological insulator Bi2Se3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi2Se3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current–voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I+/I–) for SiNWs substrate over pristine Si ...
- Published
- 2017
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