1. Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells
- Author
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Meltem F. Aygüler, Thomas Bein, Wolfram Jaegermann, Michiel L. Petrus, Alexander G. Hufnagel, Andreas Baumann, Pablo Docampo, Vladimir Dyakonov, Philipp Rieder, and Michael Wussler
- Subjects
Electron transport layer ,Materials science ,Condensed matter physics ,Fermi level ,Charge (physics) ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Tin oxide ,01 natural sciences ,0104 chemical sciences ,Hysteresis ,symbols.namesake ,symbols ,General Materials Science ,0210 nano-technology ,Conduction band ,Recombination ,Perovskite (structure) - Abstract
We tune the Fermi level alignment between the SnOx electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 and highlight that this parameter is interlinked with current–voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL–perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge collection efficiency adversely, which increases the hysteresis of PSCs.
- Published
- 2018