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Intrinsically high lattice thermal conductivity has remained a major bottleneck for achieving a high thermoelectric figure of merit (

The solidification kinetics of an alloy from its liquid state forms an underlying basis for microstructural engineering, wherein the state of thermodynamic equilibrium associated with the melt-grown crystal and the quenched amorphous solid denotes the two limits for crystallinity in the alloy synthesis. In this study, we report the implication of the crystalline state on the thermal and electrical transport properties of partially substituted Mn(Si

The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce the lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni in ZrNiSn may lead to the in situ formation of FH and/or HH alloys with interstitial Ni defects. The excess Ni develops intermediate electronic states in the band gap of ZrNiSn and also generates defects to scatter phonons, thus providing additional control to tailor electronic and phonon transport properties synergistically. In this work, we present the implication of isoelectronic Ge-doping and excess Ni on the thermoelectric transport of ZrNiSn. The synthesized ZrNi

Compositional tailoring enables fine-tuning of thermoelectric (TE) transport parameters by synergistic modulation of electronic and vibrational properties. In the present work, the aspects of compositionally tailored defects have been explored in ZrNiSn-based half-Heusler (HH) TE materials to achieve high TE performance and cost effectiveness in n-type Hf-free HH alloys. In off-stoichiometric Ni-rich ZrNi