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Despite the recent advances in electrochemical water splitting, developing cost-effective and highly efficient electrocatalysts for oxygen evolution reaction (OER) still remains a substantial challenge. Herein, two-dimensional cobalt phosphate hydroxides (Co5(PO4)2(OH)4) nanosheets, a unique stacking-disordered phosphate-based inorganic material, are successfully prepared via a facile and scalable method for the first time to serve as a superior and robust electrocatalyst for water oxidation. On the basis of the detailed characterization (e.g., X-ray absorption near-edge structure and X-ray photoelectron spectroscopy), the obtained nanosheets consist of special zigzag CoO6octahedral chains along with intrinsic lattice distortion and excellent hydrophilicity, in which these factors contribute to the highly efficient performance of prepared electrocatalysts for OER. Specifically, Co5(PO4)2(OH)4deposited on glassy carbon electrode (loading amount ≈0.553 mg cm–2) can exhibit an unprecedented overpotential of 254 mV to drive a current density of 10 mA cm–2with a small Tafel slope of 57 mV dec–1in alkaline electrolytes, which outperforms the ones of CO3(PO4)2(370 mV) and Co(OH)2(360 mV) as well as other advanced catalysts. Evidently, this work has opened a new pathway to the rational design of promising metal phosphate hydroxides toward the efficient electrochemical energy conversion.

Because of their fascinating properties, two-dimensional (2D) nanomaterials have attracted a lot of attention for developing next-generation electronics and optoelectronics. However, there is still a lack of cost-effective, highly reproducible, and controllable synthesis methods for developing high-quality semiconducting 2D monolayers with a sufficiently large single-domain size. Here, utilizing a NaOH promoter and W foils as the W source, we have successfully achieved the fabrication of ultralarge single-domain monolayer WS2films via a modified chemical vapor deposition method. With the proper introduction of a NaOH promoter, the single-domain size of monolayer WS2can be increased to 550 μm, while the WS2flakes can be well controlled by simply varying the growth duration and oxygen concentration in the carrier gas. Importantly, when they are fabricated into global backgated transistors, WS2devices exhibit respectable peak electron mobility up to 1.21 cm2V–1s–1, which is comparable to those of many state-of-the-art WS2transistors. Photodetectors based on these single-domain WS2monolayers give an impressive photodetection performance with a maximum responsivity of 3.2 mA W–1. All these findings do not only provide a cost-effective platform for the synthesis of high-quality large single-domain 2D nanomaterials, but also facilitate their excellent intrinsic material properties for the next-generation electronic and optoelectronic devices.

Group III oxides, such as In2O3and Ga2O3, have proved to be good candidates as active materials for novel electronic devices, including high-mobility transistors, gas sensors, and UV photodetectors. The ability to tune optical and electronic properties is provided by alloying In2xGa2–2xO3(InGaO) in a broad compositional range. Further development of InGaO compounds in the form of nanowires (NWs) would overcome the technological limitations, such as the substrate crystal lattice mismatch and the inability to fabricate high quality structures above the critical thickness. In this work, optical properties of alloyed InGaO NWs in a wide compositional range are carefully assessed. Unlike classical optical characterization methods, photoacoustic spectroscopy reveals the fundamental absorption edge despite the strong light scattering in porous and randomly oriented nanowires structure. An unusual compositional band gap dependence is also observed, giving insight into the phase segregation effect and increased quality of mixed NWs. In addition, photoacoustic measurements disclose potential applications of InGaO NWs in remote, light-driven loudspeakers because of intense photoacoustic effect in nanowire ensembles in this material system.

One-dimensional metal-oxide nanowires are regarded as important building blocks in nanoscale electronics, because of their unique mechanical and electrical properties. In this work, p-type nickel oxide nanowires (NiO NWs) were fabricated by combining sol–gel and electrospinning processes. The poly(vinylpyrrolidone) (PVP) with a molecular weight of 1 300 000 was used as the polymer matrix to increase the viscosity of a NiO precursor solution. The formation and properties of the as-spun NiO/PVP composite NWs before/after calcination treatment were investigated using various techniques. Because of the enhanced adhesion properties between ultraviolet (UV)-treated NiO NWs and the substrate, the field-effect transistors (FETs) based on NiO NWs were found to exhibit satisfying p-channel behaviors. For the fabrication of aligned NiO NW arrays, two parallel conducting Si strips were grounded as NW collector. The integrated FETs based on aligned NiO NWs were demonstrated to exhibit superior electrical performance, compared to the disordered counterparts with the comparable NW coverage. By employing high-kaluminum oxide (Al2O3) as a dielectric layer, instead of conventional SiO2, the devices with an aligned NiO NW array exhibit a high hole mobility of 2.8 cm2/(V s) with a low operating voltage of 5 V, fast switching speed, and successful modulation of light emission over external light-emitting diodes. To the best of our knowledge, this is the first work demonstrating the low-voltage transistors based on p-type oxide NWs, which represents a great step toward the development of sensors and CMOS logic circuits.

Electrospun metal oxide nanofibers have been regarded as promising blocks for large-area, low-cost, and one-dimensional electronic devices. However, the electronic devices based on electrospun nanofibers usually suffer from poor performance and inferior viability. Here, we report an efficient photochemical process using UV light generated by a high-pressure mercury lamp to promote the electrical performance of the nanofiber-based electronic devices. Such UV treatment can lead to strong photochemical activation of electrospun nanofibers, and therefore, a stable adherent nanofiber network and electronic-clean interface were formed. By use of UV treatment, high-performance indium oxide (In2O3) nanofiber based field-effect transistors (FETs) with highly efficient modulation of electrical characteristics have been successfully fabricated. To reduce the operating voltage and further improve the device performance, the In2O3nanofiber FETs based on solution-processed high-k AlOxdielectrics were integrated and investigated. The as-fabricated In2O3/AlOxFETs exhibit superior electrical performance, including a high mobility of 19.8 cm2V–1s–1, a large on/off current ratio of 106, and high stability over time and cycling. The improved performance of the UV-treated FETs was further confirmed by the integration of the electrospun In2O3/AlOxFETs into inverters. This work presents an important advance toward the practical applications of electrospun nanofibers for functional electronic devices.