1. Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS2 Field-Effect Transistor at Room Temperature
- Author
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Boyang Zong, Shun Mao, Xiaoyan Chen, Liangchun Li, Jian Ruan, Chengbin Liu, and Qiuju Li
- Subjects
Detection limit ,Materials science ,020502 materials ,Transistor ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,law.invention ,Metal ,Adsorption ,0205 materials engineering ,law ,Phase (matter) ,visual_art ,Monolayer ,visual_art.visual_art_medium ,Molecule ,General Materials Science ,Field-effect transistor ,0210 nano-technology - Abstract
Monolayer MoS2 (ML-MoS2) with various polymorphic phases attracts growing interests for device applications in recent years. Herein, a field-effect transistor (FET) gas sensor is developed on the basis of monolayer MoS2 with a heterophase of a 1T metallic phase and a 2H semiconducting phase. Lithium-exfoliated MoS2 nanosheets own a monolayer structure with rich active sites for gas adsorption. With thermal annealing from 50 to 300 °C, the initial lithium-exfoliated 1T-phase MoS2 gradually transforms into the 2H phase, during which the 1T and 2H heterophases can be modulated. The 1T/2H heterophase MoS2 shows p-type semiconducting properties and prominent adsorption capability for NO2 molecules. The highest response is observed for 100 °C annealed MoS2 of a 40% 1T phase and a 60% 2H phase, which shows a sensitivity up to 25% toward 2 ppm NO2 at room temperature in a very short time (10 s) and a lower limit of detection down to 25 ppb. This study demonstrates that the gas detection capability of ML-MoS2 could be boosted with the heterophase construction, which brings new insights into transition-metal dichalcogenide gas sensors.
- Published
- 2020