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Icephobic coatings have been extensively studied for decades to overcome the potential damage associated with ice formation in various devices that are operated under harsh weather conditions. Superhydrophobic surface coatings have been applied for icephobic coating applications owing to their low surface energy. In this study, an icephobic coating of a self-formed superhydrophobic surface using polydimethylsiloxane (PDMS) and SiO

Development of colloidal quantum dot (CQD) inks enables single-step spin-coating of compact CQD films of appropriate thickness, enabling the promising performance of CQD photovoltaics (CQDPVs). Today's highest-performing CQD inks rely on volatile n-butylamine (BTA), but it is incompatible with scalable deposition methods since a rapid solvent evaporation results in irregular film thickness with an uneven surface. Here, we present a hybrid solvent system, consisting of BTA and N,N-dimethylformamide, which has a favorable acidity for colloidal stability as well as an appropriate vapor pressure, enabling a stable CQD ink that can be used to fabricate homogeneous, large-area CQD films via spray-coating. CQDPVs fabricated with the CQD ink exhibit suppressed charge recombination as well as fast charge extraction compared with conventional CQD ink-based PVs, achieving an improved power conversion efficiency (PCE) of 12.22% in spin-coated devices and the highest ever reported PCE of 8.84% among spray-coated CQDPVs.

Despite tremendous progress in the power conversion efficiency (PCE) of perovskite solar cells (PeSCs), the long-term stability issue remains a significant challenge for commercialization. In this study, by blending organic halide salts, phenylethylammonium halide (PEAX, X = I, Br), with CH3NH3PbI3 (MAPbI3), we achieved remarkable enhancements in the water-repellency of perovskite films and long-term stability of PeSCs, together with enhanced PCE. The hydrophobic aromatic PEA+ group in PEAX protects the perovskite film from destruction by water. In addition, the smaller halide Br- in PEABr restructures MAPbI3 to form MAPbI3-xBrx during post-annealing, leading to lattice contraction with beneficial crystallization quality. The perovskite films modified by PEAX exhibited excellent water resistance. When the perovskite films were directly immersed in water, no obvious decompositions were observed, even after 60 s. The PEAX-decorated PeSCs exhibited considerable long-term stability. Under high-humidity conditions (60 ± 5%), the PEAX-decorated PeSCs held 80.5% for PEAI and 85.2% for PEABr of their original PCE after exposure for 100 h, whereas the pristine PeSC device lost more than 99% of its initial PCE after exposure for 60 h under the same conditions. Moreover, compared to the pristine device with a PCE of 13.28%, the PEAX-decorated PeSCs exhibited enhanced PCEs of 17.33% for the PEAI device and 17.18% for the PEABr device.

High power conversion efficiency (PCE) and long-term stability are inevitable issues faced in practical device applications of perovskite solar cells. In this paper, significant enhancements in the device efficiency and stability are achieved by using a surface-active lead acetate (Pb(OAc)2) at the top or bottom of CH3NH3PbI3 (MAPbI3)-based perovskite. When a saturated Pb(OAc)2 solution is introduced on the top of the MAPbI3 perovskite precursor, the OAc- in Pb(OAc)2 participates in lattice restructuring of MAPbI3 to form MAPbI3-x(OAc)x, thereby producing a high-quality perovskite film with high crystallinity, large grain sizes, and uniform and pinhole-free morphology. Moreover, when Pb(OAc)2 solution is mixed in the poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) solution in the bottom way, the OAc- in Pb(OAc)2 improves the water resistance of PEDOT-PSS. As the OAc- easily bonds with the Pb2+, the deposition of MAPbI3 precursor onto the Pb(OAc)2 mixed with PEDOT-PSS results in a reduction of the uncoordinated Pb, leading to strong stabilization of the perovskite layer. Both the top- and bottom-treated devices exhibit enhanced PCE values of 18.93% and 18.28%, respectively, compared to the conventional device with a PCE of 16.47%, which originates from decreased trap sites and reduced energy barriers. In particular, the bottom-treated device exhibits long-term stability, with more than 84% of its initial PCE over 800 h in an ambient environment.

The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology

We demonstrate highly efficient polymer light-emitting diodes (PLEDs), as well as polymer solar cells (PSCs), using a solution-processable poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS):graphene oxide (GO) (PEDOT:GO) composite layer as hole transport layers (HTLs). The PEDOT:GO composite HTL layer shows enhanced charge carrier transport due to improved conductivity by benzoid-quinoid transitions with a well-matched work function between GO (4.89 eV) and PEDOT:PSS (4.95 eV). Moreover, it reduces remarkably exciton quenching and suppresses recombinations that bring higher charge extraction in PSCs and increases the recombinations of holes and electrons within the active layer by the blocking behavior of the electrons from a fluorescent semiconductor due to the existence of GO with large bandgap (∼3.6 eV) in the PEDOT:GO composite layer, therefore leading to an enhancement of device efficiency in PLEDs and PSCs. The optimized PLEDs and PSCs with a PEDOT:GO composite HTL layer shows the maximum luminous efficiency of 21.74 cd/A (at 6.4 V) for PLEDs, as well as the power conversion efficiency of 8.21% for PSCs, which were improved by ∼220 and 12%, respectively, compared to reference PLEDs and PSCs with a PEDOT:PSS layer.

Highly efficient inverted-type red-emitting hybrid polymeric light-emitting diodes (HyPLEDs) were successfully demonstrated via Förster resonance energy transfer (FRET) and interfacial engineering of metal oxide with a cationic conjugated polyelectrolyte (CPE). Similarly structured green- and red-emissive polyfluorene copolymers, F8BT and F8TBT, were homogeneously blended as a FRET donor (host) and acceptor (dopant). A cationic polyfluorene-based CPE was also used as an interfacial layer for optimizing the charge injection/transport and improving the contact problem between the hydrophilic ZnO and hydrophobic polymer layer. A long Förster radius (R0 = 5.32 nm) and high FRET efficiency (~80%) was calculated due to the almost-perfect spectral overlap between the emission of F8BT and the absorption of F8TBT. A HyPLED containing 2 wt % F8TBT showed a pure red emission (λmax = 640 nm) with a CIE coordinate of (0.62, 0.38), a maximum luminance of 26 400 cd/m(2) (at 12.8 V), a luminous efficiency of 7.14 cd/A (at 12.8 V), and a power efficiency of 1.75 lm/W (at 12.8 V). Our FRET-based HyPLED realized the one of the highest luminous efficiency values for pure red-emitting fluorescent polymeric light-emitting diodes reported so far.

Nanoscale patterning of organic thin films is of great interest for next-generation technologies. To keep pace with the demands of state-of-the-art lithography, both the sensitivity and resolution of the patternable thin films need to be improved. Here we report a highly sensitive polyurea film grown by bottom-up assembly via the molecular layer deposition (MLD) technique, which allows for high-resolution patterning at the nanoscale. The MLD process used in this work provides an exceptionally high degree of control over the film thickness and composition and also offers high coating conformality. The polyurea film was formed by urea coupling reactions between 1,4-diisocyanatobutane and 2,2'-(propane-2,2-diyldioxy)diethanamine precursors and deposited in a layer-by-layer fashion. Acid-labile ketal groups were incorporated into the backbone of the polymer chains to ensure chemically amplified cleaving reactions when combined with photoacid, which was generated by electron-beam activation of triphenylsulfonium triflate soaked into the polyurea film. With electron-beam lithography, sub-100 μC/cm(2) sensitivity and sub-100 nm resolution were demonstrated using this new bottom-up assembly approach to resist fabrication.