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Start Over Author "Mark Beaverton Doczy" Journal 61st device research conference. conference digest (cat. no.03th8663)
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1. Silicon nano-transistors and breaking the 10 nm physical gate length barrier

Author

B. Doyle, Mark Beaverton Doczy, R. Chau, Matthew V. Metz, Suman Datta, Jack Portland Kavalieros, B. Jin, and Scott Hareland

Subjects
Materials science, Silicon, Hybrid silicon laser, business.industry, Transistor, Silicon on insulator, chemistry.chemical_element, Dielectric, law.invention, CMOS, chemistry, law, Nano, MOSFET, Electronic engineering, Optoelectronics, business
Abstract

In this paper, the performance and energy delay trends for research devices down to 10 nm and also discusses the 10 nm barrier and potential ways to break it were explored.

Published
2004
Full Text
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