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Your search keyword '"Gert J. Leusink"' showing total 2 results
Start Over Author "Gert J. Leusink" Journal 2020 ieee international interconnect technology conference (iitc)
2 results on '"Gert J. Leusink"'

1. Plasma-induced roughness and chemical modifications of TiN bottom electrode and their impact on HfO2-MIM properties

Author

Kathleen Dunn, Gert J. Leusink, Amber Palka, Angelique Raley, Dina H. Triyoso, Sophia Rogalskyj, Hunter Frost, Robert D. Clark, Cory Wajda, and Nicholas Joy

Subjects
Resistive touchscreen, Materials science, business.industry, chemistry.chemical_element, Surface finish, Resistive random-access memory, X-ray photoelectron spectroscopy, chemistry, Stack (abstract data type), Electrode, Surface roughness, Optoelectronics, business, Tin
Abstract

Metal-insulator-metal (MIM) stacks, though simple in design, are the backbone device for resistive random access memories (ReRAM) and, as such, play a vital role in emerging memory technologies. In this work, we characterize the impact of Ar, Ar/N2, and BCl3/Cl2 plasma processes on the physical properties of the TiN bottom electrode (BE) surface. The BCl3/Cl2 process increases roughness by 40%. Ar and Ar/N2 processes both decrease PVD TiN roughness by 50%. This reduction propagates through the entire MIM stack. X-ray photoelectron spectroscopy (XPS) indicates that both plasma processes alter the Ti-ON concentration on the TiN surface. The impact of BE surface roughness and composition on MIM electrical properties is currently under investigation.

Published
2020

2. Wafer Surface Control for Ru Capping on Cu interconnect

Author

Hirokazu Aizawa, Gyana Pattanaik, Kai-Hung Yu, Kaoru Maekawa, and Gert J. Leusink

Subjects
Interconnection, Materials science, Chemical engineering, Copper interconnect, Nucleation, Wet cleaning, Wafer, Selective deposition, Layer (electronics), Leakage (electronics)
Abstract

Ru capping process was demonstrated on 48nm-pitch Cu damascene interconnect with area selective deposition technique of Ru CVD. Ru nucleation and film continuity were optimized by process including wet cleaning and dry surface treatments. Physical analysis and line leakage electrical test were conducted to evaluate Ru capping layer for different process conditions.

Published
2020

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