1. Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level
- Author
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Sören Schäfer, Felix Haase, Rolf Brendel, Jan Krügener, Robby Peibst, and Christina Hollemann
- Subjects
010302 applied physics ,Materials science ,Passivation ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Cell technology ,law.invention ,law ,0103 physical sciences ,Screen printing ,Thermal ,Optoelectronics ,Deposition (phase transition) ,Wafer ,Diffusion (business) ,0210 nano-technology ,business - Abstract
We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.
- Published
- 2019