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Start Over Author "M-H Liao" Journal 2018 ieee 2nd electron devices technology and manufacturing conference (edtm)
1 results on '"M-H Liao"'

1. Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

Author

Y.-C. Chou, Z.-Y. Wang, S-S. Gu, H.-H. Chen, S.-Y. Chen, M. H. Lee, M.-H. Liao, C.-Y. Liao, C.Y. Kuo, R.-C. Hong, K.-S. Li, P.-G. Chen, and C.-H. Tang

Subjects
0301 basic medicine, Very-large-scale integration, Materials science, business.industry, Annealing (metallurgy), Doping, Gate stack, Memory operation, Ferroelectricity, 03 medical and health sciences, 030104 developmental biology, Logic gate, Optoelectronics, Field-effect transistor, business
Abstract

The typical characteristics of ultra-thin Zr doped in HfO 2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with V P /E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

Published
2018

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