1. A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates
- Author
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Frederic Allibert, Sergej Makovejev, Jean-Pierre Raskin, and B. Kazemi Esfeh
- Subjects
Total harmonic distortion ,Materials science ,business.industry ,020208 electrical & electronic engineering ,Silicon on insulator ,020206 networking & telecommunications ,02 engineering and technology ,Substrate (electronics) ,Active devices ,Signal ,RF switch ,0202 electrical engineering, electronic engineering, information engineering ,Harmonic ,Optoelectronics ,Insertion loss ,business - Abstract
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on-Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2nd harmonic is achieved compared with HR SOI substrate.
- Published
- 2017
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