1. Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
- Author
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Nayana Ramesh, Digbijoy N. Nath, K. N. Bhat, Abhay Kulkarni, Manikant Singh, Navakant Bhat, Nagaboopathy Mohan, Ankit Soni, Shreesha Prabhu, Mayank Shrivastava, Rohith Soman, Bhawani Shankar, Srinivasan Raghavan, Hareesh Chandrasekar, Neha Mohta, and Rangarajan Muralidharan
- Subjects
010302 applied physics ,Materials science ,business.industry ,020208 electrical & electronic engineering ,Wide-bandgap semiconductor ,Post failure ,Algan gan ,02 engineering and technology ,High-electron-mobility transistor ,01 natural sciences ,Instability ,Safe operating area ,Trap (computing) ,Stress (mechanics) ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,business - Abstract
This work reports the very first systematic study on the physics of avalanche instability and SOA concerns in AlGaN/GaN HEMT using sub-μs pulse characterization, post stress degradation analysis, well calibrated TCAD simulations and failure analysis by SEM and TEM. Impact of electrical, as well as thermal effects on SOA boundary and avalanche instability are investigated. Trap assisted cumulative nature of degradation is studied in detail, which was discovered to be the root cause for avalanche instability in AlGaN/GaN HEMTs. Post failure SEM/TEM analysis reveal distinct failure modes in presence and absence of carrier trapping.
- Published
- 2017
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