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In this paper, the analog/radio frequency and linearity performance of staggered heterojunction nanowire tunnel FET is studied and compared with Si and InAs based NW TFET of same dimension. Different analog/RadioFrequency and linearity parameters like transconductance (gm), intrinsic gain (gmR0), cut-off frequency (fT), as well as 1-dB compression point has been studied. There is a better enhancement in the analog/RF performance obtained from heterojunction NW TFET over Si and InAs TFET. To improve ION and subthreshold swing, a considerable advance in the analog/RadioFrequency performance parameters obtain by the HETJ Nanowire TFET in comparision to Si and InAs Nanowire tunnel FET for use in analog/mixed signal low power applications is reported. The result reveals that heterojunction TFET provides superior intrinsic gain, higher cutoff frequency, better linearity performance as compared to Si and InAs TFET.

The Analog/Radio Frequency and Linearity analysis of a III-V Heterostructure Underlap Double Gate MOSFET is done using the numerical TCAD device simulator. Heterostructure Underlap DGMOS has evolved as a strong contender for various digital application. In analog and RF circuit application, linearity testing and RF performance confronts as a major problem which develops due to non linearity of the devices. In this paper, different figure of merits like Transconductance(gm), Transconductance Generation Factor (gm/ID), Cut off frequency(fT), Variable Intercept Point of Second order(VIP2)are analyzed. The comparative study with Junctionless Double Gate MOSFET has been carried out. The results reveal that Heterostucture DGMOS shows great promise to become a competitive contender for Analog/Mixed signal System-On-Chip (SOC) application by demonstrating a significant improvement in its RF performance.