1. Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs
- Author
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Chih-Hsiung Huang, Satheesh Kuppurao, I-Hsieh Wong, Sun-Rong Jan, Chorng-Ping Chang, Yi-Chiau Huang, Yu-Shiang Huang, Chung-Yi Lin, Da-Zhi Chang, Chee-Wee Liu, Chih-Hao Huang, Huang-Siang Lan, Fang-Liang Lu, Hua Chung, and Schubert S. Chu
- Subjects
010302 applied physics ,education.field_of_study ,Photoluminescence ,Materials science ,Condensed matter physics ,business.industry ,Population ,Uniaxial tension ,01 natural sciences ,0103 physical sciences ,Optoelectronics ,Mosfet circuits ,education ,business ,Quantum well - Abstract
Pseudomorphic Ge 0.91 Sn 0.09 on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge 0.91 Sn 0.09 Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on channel direction is observed using external transverse uniaxial tensile strain (∼0.11%). The highest [Sn] of 9% in the channels grown by CVD, Pt SB S/D, high I on /I off ratio, and strain-enhanced mobility are obtained in this work.
- Published
- 2016
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