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As a typcial kondo insulator, SmB 6 has attracted most of attention in recent years. But their corresponding nanostructures are hard to fabricate due to the growth technique. In this paper, uniform SmB 6 nanocone arrays have been successfully fabricated by a simple chemical vapor deposition (CVD) method. The field emission (FE) behaviors of SmB 6 nanocone arrays were investigated to reveal their surface properties. FE measurement results show that SmB 6 nanocone arrays have a low turn-on electric field of 1.84 V/μm (at 10 μA/cm2) and good emission stability, which may have potential applications in FE area.

The B/LaB 6 hierarchical heterojunction nanostructures have been successfully fabricated on Si substrate by CVD technique. The branch-like morphology may be beneficial to improving their field emission (FE) properties by increasing the aspect ratio or growth density of the emitters. The results show that the threshold field of the B/LaB 6 branch-like nanoheterojunctions is 21.6 V/μm (@1 mA/cm2) and their maximum field current density can reach 4.8 mA/cm2 (at 27.5 V/μm). It is suggested a novel Ohmic-contact LaB 6 nanoheterojunction to promote their rapid applications in FE area in future.