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Start Over Author "Sebaai, F." Journal 2015 ieee international electron devices meeting (iedm)
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1. Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

Author

Waldron, N., primary, Sioncke, S., additional, Franco, J., additional, Nyns, L., additional, Vais, A., additional, Zhou, X., additional, Lin, H. C., additional, Boccardi, G., additional, Maes, J. W., additional, Xie, Q., additional, Givens, M., additional, Tang, F., additional, Jiang, X., additional, Chiu, E., additional, Opdebeeck, A., additional, Merckling, C., additional, Sebaai, F., additional, van Dorp, D., additional, Teugels, L., additional, Hernandez, A. Sibaja, additional, De Meyer, K., additional, Barla, K., additional, Collaert, N., additional, and Thean, Y-V., additional

Published
2015
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