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The electrostatic-focusing Spindt-type field emitter array (FEA) pitch was optimized for an FEA-high-gain avalanche rushing amorphous photoconductor (HARP) image sensor. Simulation results showed that a narrow FEA pitch of less than 2.2 µm deteriorates the electrostatic focusing effect.

Volcano-structured double-gate Spindt type field emitter arrays were fabricated using double-layered photoresist as a lift-off layer for the image sensor application. The emitter material that we tested is Ni and Mo/Ni. Electron beam focusing characteristics were evaluated by scanning slit method.

Photoassisted electron emission from p-type silicon field emitter array with sub-micron gate aperture under illumination of blue laser pulses is investigated. The FEA device is designed to minimize the photogeneration of slow electrons outside the depletion layer. We present the optical response studies of the device by laser pulses.

A research project on the development of radiation tolerant compact image sensor with a field emitter array started in 2013. The purpose of the project is to develop key components of the image sensor that has sufficiently high radiation tolerance, as a step to investigate the interior of the nuclear reactor of Nuclear Power Plant Fukushima the 1st. A volcano-structured double-gated Spindt-type field emitter array is now under development. As a photoconductor, a layer of cadmium telluride and cadmium sulfide is adopted. Fundamental characteristics of the image sensor with these components together with the radiation tolerance are examined.