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Start Over Author "John W. Golz" Journal 2014 ieee international electron devices meeting
1 results on '"John W. Golz"'

1. Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation

Author

S.S. Iyer, Jennifer A. Oakley, Troy L. Graves-Abe, William F. Landers, K. Tunga, John M. Safran, Kevin S. Petrarca, Sami Rosenblatt, C. Kothandaraman, Mukta G. Farooq, Christopher N. Collins, Stephan A. Cohen, Christopher Parks, Andrew J. Martin, Jinping Liu, John W. Golz, and Norman Robson

Subjects
Materials science, Through-silicon via, business.industry, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Optoelectronics, Hardware_PERFORMANCEANDRELIABILITY, Penetration (firestop), business, Dram, Ion, Voltage
Abstract

A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.

Published
2014
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