1. Graphene field effect transistors on SiC with T-Shaped gate: Homogeneity and RF performance
- Author
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Mohamed Salah Khenissa, Emiliano Pallecchi, Mohamed Belhaj, Ivy Colambo, Henri Happy, D. Vignaud, David Mele, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
- Subjects
Materials science ,business.industry ,Graphene ,Gate dielectric ,Contact resistance ,Electrical engineering ,law.invention ,[SPI]Engineering Sciences [physics] ,chemistry.chemical_compound ,chemistry ,law ,Gate oxide ,Logic gate ,Silicon carbide ,Optoelectronics ,Field-effect transistor ,business ,Graphene nanoribbons - Abstract
In this letter we present our work on top-gated graphene field-effect transistors GFET. The Transistors have been processed on epitaxial graphene synthesized on the Si-face of a SiC substrate, using a high-k dielectric Al 2 O 3 as a gate oxide. In order to reduce the gate access resistance, we chosed a T-gate geometry. The Hall mobility is on the order 780 cm2/vs at room temperature, for an intrinsic carrier concentration of the order of 8.7 10+12 /cm2. We used Nickel as a contact material, The contact resistance was measured by the Transmission Line Method (TLM) where the value of ρ c is 2 × 10−6 Ω.cm2. We characterized our devices from DC up to 67 GHz. Cut-off frequency f t as high as 90 GHz has been obtained for the 170 nm gate length transistors. The maximum value of f t is 43 GHz and the maximum value of f max is 23 GHz. Finally, we studied the homogeneity of the GFETS realized across the whole sample surface (1/4 of inch).
- Published
- 2014
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