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2. Impact of multi-gate device architectures on digital and analog circuits and its implications on System-On-Chip technologies

3. Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs

4. Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

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