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We report on a 2D simulation study of a couple of mid-infrared quantum cascade lasers based on the integration of a number of optoelectronic models. Quantum mechanical computation was performed to find the quantization states and a rate equation approach was used to compute the optical gain. Temperature and field dependence effects are taken into account in optical gain model to make a realistic simulation of QCLs. The simulation study compared the integrated models with experimental data with different structures and at different temperatures. Reasonable agreements between experiment and simulation have been obtained.

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED.

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.