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Your search keyword '"Steffen Marschmeyer"' showing total 2 results
Start Over Author "Steffen Marschmeyer" Journal 2010 international electron devices meeting
2 results on '"Steffen Marschmeyer"'

1. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

Author

D. Bolze, H. Rucker, D. Knoll, Thomas Grabolla, Bernd Heinemann, Yuji Yamamoto, Gunter Fischer, R. Kurps, C. Wipf, O. Fursenko, Bernd Tillack, Ulrich Haak, A. Fox, M. A. Schubert, J. Schmidt, J. Drews, D. Schmidt, R. Barth, M. Lisker, D. Wolansky, and Steffen Marschmeyer

Subjects
Materials science, business.industry, Heterojunction bipolar transistor, Electrical engineering, Ring oscillator, Salicide, Silicon-germanium, chemistry.chemical_compound, chemistry, Logic gate, Silicon carbide, Optoelectronics, business, Common emitter
Abstract

A SiGe HBT technology featuring f T /f max /BV CEO =300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to our previous SiGe HBT generations originates from lateral device scaling, a reduced thermal budget, and changes of the emitter and base composition, of the salicide resistance as well as of the low-doped collector formation.

Published
2010

2. BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

Author

Mehmet Kaynak, T. Fischer, K. Schulz, Bernd Tillack, D. Wolansky, J. S. Kim, F. Korndorfer, Ulrich Haak, J. W. Kim, Yongbaek Kim, R. Barth, W-G. Lee, Kai Zoschke, R. Scholz, C. Wipf, K.-E. Ehwald, A. Fox, D. Knoll, J. Drews, Matthias Wietstruck, and Steffen Marschmeyer

Subjects
Materials science, business.industry, Transistor, Electrical engineering, BiCMOS, Optical switch, PMOS logic, law.invention, law, Rise time, Insertion loss, Crossover switch, business, Wafer-level packaging
Abstract

We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch integration is very simple, adding only one mask step to the underlying high-performance BiCMOS process. Moreover, it offers low cost, wafer level packaging. The insertion loss of the switch is less than 0.5dB up to 140GHz, and isolation is better than 15dB in the frequency range of 90 to 140GHz. The switch-on time is measured as 10µs. No performance degradation was observed after 5 billion cold switching cycles demonstrating the high reliability of the switch. An on-chip charge-pump (CP) circuit is realized using enhanced PMOS transistor to excite the switch with an output voltage of up to 50V and a rise time of 2µs.

Published
2010

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