1. High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response
- Author
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Guang-Li Luo, Chenming Hu, Hung-Chih Chang, Huang-Siang Lan, Yen-Chun Fu, Chao-Hsin Chien, Yen-Ting Chen, William W. Y. Hsu, Cheng-Han Lee, Hou-Yun Lee, Fu-Liang Yang, and Chee-Wee Liu
- Subjects
Thermal oxidation ,Materials science ,Strain (chemistry) ,chemistry ,Rapid thermal processing ,MOSFET ,Analytical chemistry ,Electronic engineering ,chemistry.chemical_element ,Germanium ,Substrate (electronics) ,Electroluminescence ,Dispersion (chemistry) - Abstract
The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO 2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial tensile strain (0.08%) on channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.
- Published
- 2010
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