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We demonstrate a new method for direct wire-bonding of silicon devices, which does not require any metal bond-pads. A wire bond-ball is pressed into a hole etched in the silicon device layer, and is wedged in the hole by plastic deformation. Experimental measurements show that strength and conductivity of direct-bonds are comparable to those of standard wire-bonds on metal pads. The relevance of direct wire-bonding is that by eliminating metal bond-pads, constraints on high temperature processing steps and limitations on sacrificial release steps, are alleviated.

This paper presents a new efficient technique for simulating the dynamic response of electrostatic micro switches. It is demonstrated that the dynamic response of a switch can be well predicted based on only a few static states of the system. Using energy methods the deformation of the system is approximated by a single adaptive mode, such that time integration is performed on a scalar equation of motion. Due to the high computational efficiency of the proposed method, it can be used to motivate the functional form of damping forces and extract damping parameters, by fitting experimentally measured dynamic responses.

This paper reports the parallel internal electrostatic transduction of a laterally driven Lame-mode polysilicon resonator. This resonator is fabricated using a manufacturable double nanogap process that provides ultrathin high-aspect ratio lateral gaps. The transduction electrodes are optimally placed and oriented to maximize electromechanical transduction efficiency for the fundamental Lame mode. A 128.15 MHz Lame-mode resonator is driven and sensed differentially with a 20 V DC polarization voltage: the motional resistance is about 30 k? and the quality factor Q ≫ 12000 in air.